Sun Lijie

Dependence of Photovoltaic Property of ZnO/Si Heterojunction Solar Cell on Thickness of ZnO Films

N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates. Thicknesses of ZnO films are altered by varying the deposition time from 1 h to 3 h. The electrical properties of these structures are analysed from capacitance-voltage (C-V) and current-voltage (I-V) characteristics performed in a dark room. The results demonstrated that all the samples show strong rectifying behaviour. Photovoltaic property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current. It is found that photovoltages are kept to be almost constant of 320 mV along with the thickness while photocurrents changing a lot. The variation mechanism of the photovoltaic effect as a function of thickness of ZnO films is investigated.

Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions

A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering. Their structural properties, I—V curves, photovoltaic effects and photo-response spectra were studied. The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated. It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction. The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/n-SiC/p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing. It shows that the photoresponse of n-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si. There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.

A 2.05 eV AlGaInP sub-cell used in next generation solar cells

An Al0.13GaInP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE comparison was carried out to verify the influence of an O-related defect introduced by the high Al-content materials on the cell performance during MOCVD growth. Hetero-structures are employed to confirm the origin of the decreasing short circuit current density compared to a GaInP single junction solar cell. An effective method to improve the performance of broadband solar cells by increasing Isc with a cost of Voc was proposed.

Experimental Study of Beta-Delayed Proton Emission of 36,37Ca

The investigation of beta-delayed proton decay mode has become a powerful probe to study the proton-rich nuclei and their nuclear structure. To study exotic nuclei with extremely low purity produced by the Radioactive Ion Beam Line in Lanzhou, we perform an experiment of beta-delayed proton emission of 36,37Ca under a high-intensity continuous-beam mode. Ions are implanted into a double-sided silicon strip detector, where the subsequent decays are correlated to the preceding implantations in time sequence. The energy spectra of delayed protons from 36,37Caβ decay, half-lives and decay branching ratios are measured. The experimental results confirm the previous literature data and some improved results are obtained as well, demonstrating the feasibility of our detection approach and the reliability of our data analysis procedure. This allows for the development of more powerful detection arrays and further research on nuclei closer to proton-drip line on the basis of present work.

Development of large-area quadrant silicon detector for charged particles *

The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300

Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

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Te doped ultrabroad band tunnel junction

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Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD

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Optimizing back surface field for improving V(oc) of (Al)GaInP solar cell

48 mm

A Sensitivity Test of Extracting the Optical Potential Parameters for 6He+209Bi from the Transfer Reaction 208Pb(7Li,6He)209Bi

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