Sun Yongjian

GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-off Process and Transferred to Cu

GaN-based thin film vertical structure light-emitting diodes (VS-LEDs) were fabricated by a modified YAG laser lift-off (LLO) process and transferred to Cu substrates. With a comparison of the electrical and optical properties of conventional LEDs on sapphire substrates and of lateral structure thin film LEDs by a KrF LLO process, the vertical structure of LLO LEDs shows obvious superiority. LLO VSLEDs made by modified YAG LLO process show less increase of leakage current than the devices made by conventional KrF LLO process. Furthermore, owing to the well current spreading and less current path, the ideality factors and series resistance of vertical structure LEDs reduce greatly and the efficiency increases more obviously than the lateral structure LEDs, which is also reflected on the relative L-I curves. The output power of vertical structure LEDs is over 3 times greater than that of the lateral structure LLO LEDs within 300mA.

Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates

GaN films on sapphire substrates are obtained using the metal-organic chemical vapor deposition growth technique. We present two methods to reduce the GaN wafer bowing caused by the mismatch of the thermal expansion coefficients (TECs) between the film and the substrate. The first method is to use coating materials on the back side of the substrate whose TECs are smaller than that of the GaN films. The second is to cut grooves on the back side of the sapphire substrate and filling the grooves with appropriate materials (e.g., tungsten, silicon nitride). For each method, we minimize wafer bowing and even reduce it to zero. Moreover, the two methods can reduce stress concentration and suppress the propagation of cracks in the GaN/sapphire structure.

Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.