Sung-Jin An

Ferromagnetic properties of Zn1−xMnxO epitaxial thin films

We report on ferromagnetic characteristics of Zn1−xMnxO (x=0.1 and 0.3) thin films grown on Al2O3(00⋅1) substrates using laser molecular-beam epitaxy. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental band gap energy. The Curie temperature obtained from temperature-dependent magnetization curves was 45 K for the film with x=0.3, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.9Mn0.1O at 5 K were 0.9 emu/g and 300 Oe, respectively. For Zn0.7Mn0.3O, the remanent magnetization at 5 K increased to 3.4 emu/g.

Evaluation of the discrete energy levels of individual ZnO nanorodsingle-quantum-well structures using near-field ultraviolet photoluminescence spectroscopy

Spatially and spectrally resolved photoluminescence imaging of individual ZnO∕ZnMgO nanorod single-quantum-well structures (SQWs) with a spatial resolution of 55nm was performed using the optical near-field technique with a metallized UV fiber probe. Using excitation power density-dependent photoluminescence spectra of a ZnO∕ZnMgO SQW nanorod, we observed the discrete energy levels in a ZnO quantum-well layer.