Sung-Soo Bae

Scanning tunneling microscopy of template-stripped Au surfaces and highly ordered self-assembled monolayers.

Template stripping of Au films in ultrahigh vacuum (UHV) produces atomically flat and pristine surfaces that serve as substrates for highly ordered self-assembled monolayer (SAM) formation. Atomic resolution scanning tunneling microscopy of template-stripped (TS) Au stripped in UHV confirms that the stripping process produces a flat, predominantly 111 textured, atomically clean surface. Octanethiol SAMs vapor deposited in situ onto UHV TS Au show a c(4 x 2) superlattice with (square root 3 x square root 3) R30 degrees basic molecular structure having an ordered domain size up to 100 nm wide. These UHV results validate the TS Au surface as a simple, clean and high-quality surface preparation method for SAMs deposited from both vapor phase and solution phase.

Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100)

We investigated the formation of Pt silicide nanowires on a Si(100) surface using scanning tunnelling microscopy and high-resolution photoemission spectroscopy. Pt silicide nanowires with a tetragonal Pt2Si structure are formed along the step edges of Si(100). Pt-induced c(4 × 2) reconstructions also appear adjacent to the tetragonal Pt2Si nanowires. Formation of the Pt2Si nanowires is attributed to the anisotropic lattice mismatches between the tetragonal Pt2Si structure and Si(100). Scanning tunnelling spectroscopy data show that the nanowires are metallic. The stoichiometry of Pt silicide is confirmed by high-resolution photoemission spectroscopy.

Adsorption configuration change of pyridine on Ge(100): dependence on exposure amount.

The variations of adsorption configurations of pyridine on Ge(100) as a function of exposure amount have been studied using high-resolution photoelectron spectroscopy (HRPES). At low exposure the C 1s and N 1s core levels show a single adsorption state of pyridine with N 1s binding energy at 400.85 eV and C 1s binding energies at 286.7 and 285.9 eV, respectively. Those are attributable to Ge-N dative bonding of pyridine through the lone pair electrons of its N atom, which is consistent with previous STM and theoretical studies. As the molecular exposure increases the N 1s core level reveals not only the dative-bonding state of pyridine but also the appearance of a new chemical state at 398.80 eV, corresponding to the sigma bonding of Ge-N. Such a change of adsorption configuration agrees well with new C 1s features at the low binding energy side, which accounts for the evolution of cycloaddition products with Ge-C bonds. Consequently, di-sigma-bonded cycloadducts coexist with Ge-N dative-bonding products for the final configuration with high density of pyridine on the Ge(100).

Selective Reactions and Adsorption Geometries of a Multifunctional Molecule: cis-2-Butene-1,4-diol on Si(100)-2 x 1

The adsorption geometry of cis-2-butene-1,4-diol (BEDO, HOCH(2)CH=CHCH(2)OH) on Si(100)-2 x 1 was studied using scanning tunneling microscopy (STM), high resolution X-ray photoemission spectroscopy (XPS), and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Bias-voltage-dependent STM images exhibited features characteristic of two distinct BEDO adsorption geometries. One feature was a bright protrusion located on the center of a single dimer, indicating an on-top configuration. The low bias-voltage STM image clearly showed dark features indicative of the formation of Si-H bonds on adjacent dimers in the same dimer row. The other feature was a bright protrusion bridged on end between two adjacent dimers in the same dimer row, indicating an end-bridge configuration. Accompanying this feature, two dark features attributed to Si-H bonds were observed on opposite positions to the bridged protrusion. From the XPS results, the Si 2p core level spectra revealed that the dimer atoms are involved in the formation of Si-O and Si-H bonds. On the other hand, carbon K-edge NEXAFS spectra showed that the C=C bond does not participate in the adsorption reaction and remains as an unreacted group. Collectively, the experimental results indicate that the adsorption of BEDO on Si(100)-2 x 1 occurs through the formation of two Si-O bonds via nucleophilic reaction between the two OH groups of BEDO and two Si-Si dimers. Importantly, the maintenance of the C=C bond means that the C=C functional group can be utilized as a new reaction site for further surface chemical reactions.

Unidirectional Pt silicide nanowires grown on vicinal Si(100).

We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.