Susan K. Fullerton-Shirey

2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

Author(s): Lin, Z; McCreary, A; Briggs, N; Subramanian, S; Zhang, K; Sun, Y; Li, X; Borys, NJ; Yuan, H; Fullerton-Shirey, SK; Chernikov, A; Zhao, H; McDonnell, S; Lindenberg, AM; Xiao, K; Le Roy, BJ; Drndic, M; Hwang, JCM; Park, J; Chhowalla, M; Schaak, RE; Javey, A; Hersam, MC; Robinson, J; Terrones, M | Abstract:

Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte

Transition metal dichalcogenides are relevant for electronic devices owing to their sizable band gaps and absence of dangling bonds on their surfaces. For device development, a controllable method for doping these materials is essential. In this paper, we demonstrate an electrostatic gating method using a solid polymer electrolyte, poly(ethylene oxide) and CsClO4, on exfoliated, multilayer 2H-MoTe2. The electrolyte enables the device to be efficiently reconfigured between n- and p-channel operation with ON/OFF ratios of approximately 5 decades. Sheet carrier densities as high as 1.6 × 10(13) cm(-2) can be achieved because of a large electric double layer capacitance (measured as 4 μF/cm(2)). Further, we show that an in-plane electric field can be used to establish a cation/anion transition region between source and drain, forming a p-n junction in the 2H-MoTe2 channel. This junction is locked in place by decreasing the temperature of the device below the glass transition temperature of the electrolyte. The ideality factor of the p-n junction is 2.3, suggesting that the junction is recombination dominated.

Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine

To deposit an ultrathin dielectric onto WSe2, monolayer titanyl phthalocyanine (TiOPc) is deposited by molecular beam epitaxy as a seed layer for atomic layer deposition (ALD) of Al2O3 on WSe2. TiOPc molecules are arranged in a flat monolayer with 4-fold symmetry as measured by scanning tunneling microscopy. ALD pulses of trimethyl aluminum and H2O nucleate on the TiOPc, resulting in a uniform deposition of Al2O3, as confirmed by atomic force microscopy and cross-sectional transmission electron microscopy. The field-effect transistors (FETs) formed using this process have a leakage current of 0.046 pA/μm(2) at 1 V gate bias with 3.0 nm equivalent oxide thickness, which is a lower leakage current than prior reports. The n-branch of the FET yielded a subthreshold swing of 80 mV/decade.

Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers

The effect of air exposure on 2H-WSe2/HOPG is determined via scanning tunneling microscopy (STM). WSe2 was grown by molecular beam epitaxy on highly oriented pyrolytic graphite (HOPG), and afterward, a Se adlayer was deposited in situ on WSe2/HOPG to prevent unintentional oxidation during transferring from the growth chamber to the STM chamber. After annealing at 773 K to remove the Se adlayer, STM images show that WSe2 layers nucleate at both step edges and terraces of the HOPG. Exposure to air for 1 week and 9 weeks caused air-induced adsorbates to be deposited on the WSe2 surface; however, the band gap of the terraces remained unaffected and nearly identical to those on decapped WSe2. The air-induced adsorbates can be removed by annealing at 523 K. In contrast to WSe2 terraces, air exposure caused the edges of the WSe2 to oxidize and form protrusions, resulting in a larger band gap in the scanning tunneling spectra compared to the terraces of air-exposed WSe2 monolayers. The preferential oxidation at the WSe2 edges compared to the terraces is likely the result of dangling edge bonds. In the absence of air exposure, the dangling edge bonds had a smaller band gap compared to the terraces and a shift of about 0.73 eV in the Fermi level toward the valence band. However, after air exposure, the band gap of the oxidized WSe2 edges became about 1.08 eV larger than that of the WSe2 terraces, resulting in the electronic passivation of the WSe2.

Loading and distribution of a model small molecule drug in poly(N-isopropylacrylamide) brushes: a neutron reflectometry and AFM study.

The structure of a hydrated poly(N-isopropylacrylamide) brush loaded with 5 vol % Isoniazid is studied as a function of temperature using neutron reflectometry (NR) and atomic force microscopy (AFM). NR measurements show that Isoniazid increases the thickness of the brush before, during and after the polymer collapse, and it is retained inside the brush at all measured temperatures. The Isoniazid concentration in the expanded brush is ~14% higher than in the bulk solution, and the concentration nearly doubles in the collapsed polymer, suggesting stronger binding between Isoniazid and the polymer compared to water, even at temperatures below the lower critical solution temperature (LCST) where the polymer is hydrophilic. Typically, additives that bind strongly to the polymer backbone and increase the hydrophilicity of the polymer will delay the onset of the LCST, which is suggested by AFM and NR measurements. The extent of small-molecule loading and distribution throughout a thermo-responsive polymer brush, such as pNIPAAm, will have important consequences for applications such as drug delivery and gating.

Easily prepared ruthenium-complex nanomicelle probes for two-photon quantitative imaging of oxygen in aqueous media

We present a simple and inexpensive technique to enable 3D, high-resolution, and quantitative imaging of dissolved oxygen in aqueous media using a commercially available hydrophobic dye, [Ru(dpp)3]2+. The dye is encapsulated in nanomicelles formed by a poloxamer (a biocompatible surfactant), allowing for uniform dispersion in aqueous media without long, complex, and expensive chemical synthesis procedures. The nanomicelle probes are tested and found to remain stable for several months in water and for several hours in biological media. The probes are sufficiently large in size for vasculature retention and enable intravenous oxygen imaging in vivo. The two-photon cross-section of the [Ru(dpp)3]2+ nanomicelle probes surpass that of the well-established and widely used oxygen-sensitive probes in multiphoton microscopy. We also characterize the oxygen-sensitivity of the probes as a proof of their viability as low cost and easily prepared markers for multiphoton quantitative oxygen imaging in vivo and for other applications in aqueous media.

In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces.

Several proposed beyond-CMOS devices based on two-dimensional (2D) heterostructures require the deposition of thin dielectrics between 2D layers. However, the direct deposition of dielectrics on 2D materials is challenging due to their inert surface chemistry. To deposit high-quality, thin dielectrics on 2D materials, a flat lying titanyl phthalocyanine (TiOPc) monolayer, deposited via the molecular beam epitaxy, was employed to create a seed layer for atomic layer deposition (ALD) on 2D materials, and the initial stage of growth was probed using in situ STM. ALD pulses of trimethyl aluminum (TMA) and H2O resulted in the uniform deposition of AlOx on the TiOPc/HOPG. The uniformity of the dielectric is consistent with DFT calculations showing multiple reaction sites are available on the TiOPc molecule for reaction with TMA. Capacitors prepared with 50 cycles of AlOx on TiOPc/graphene display a capacitance greater than 1000 nF/cm(2), and dual-gated devices have current densities of 10(-7)A/cm(2) with 40 cycles.

Monolayer Solid-State Electrolyte for Electric Double Layer Gating of Graphene Field-Effect Transistors

The electrostatic gating of graphene field-effect transistors is demonstrated using a monolayer electrolyte. The electrolyte, cobalt crown ether phthalocyanine (CoCrPc) and LiClO4, is deposited as a monolayer on the graphene channel, essentially creating an additional two-dimensional layer on top of graphene. The crown ethers on the CoCrPc solvate lithium ions and the ion location is modulated by a backgate without requiring liquid solvent. Ions dope the channel by inducing image charges; the doping level (i.e., induced charge density) can be modulated by the backgate bias with the extent of the surface potential change being controlled by the magnitude and polarity of the backgate bias. With a crown ether to Li+ ratio of 5:1, programming tests for which the backgate is held at -VBG shift the Dirac point by ∼15 V, corresponding to a sheet carrier density on the order of 1012 cm-2. This charge carrier density agrees with the packing density of monolayer CoCrPc on graphene that would be expected with one Li+ for every five crown ethers (at the maximum possible Li+ concentration, 1013 cm-2 is predicted). The crown ethers provide two stable states for the Li+: one near the graphene channel (low-resistance state) and one ∼5 Å away from the channel (high-resistance state). Initial state retention measurements indicate that the two states can be maintained for at least 30 min (maximum time monitored), which is 106 times longer than polymer-based electrolytes at room temperature, with at least a 250 Ω μm difference between the channel resistance in the high- and low-resistance states.

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2

Evaluating and tuning the properties of two-dimensional (2D) materials is a major focus of advancing 2D science and technology. While many claim that the photonic properties of a 2D layer provide evidence that the material is “high quality”, this may not be true for electronic performance. In this work, we deconvolute the photonic and electronic response of synthetic monolayer molybdenum disulfide. We demonstrate that enhanced photoluminescence can be robustly engineered via the proper choice of substrate, where growth of MoS2 on r-plane sapphire can yield >100x enhancement in PL and carrier lifetime due to increased molybdenum-oxygen bonding compared to that of traditionally grown MoS2 on c-plane sapphire. These dramatic enhancements in optical properties are similar to those of super-acid treated MoS2, and suggest that the electronic properties of the MoS2 are also superior. However, a direct comparison of the charge transport properties indicates that the enhanced PL due to increased Mo-O bonding leads to p-type compensation doping, and is accompanied by a 2x degradation in transport properties compared to MoS2 grown on c-plane sapphire. This work provides a foundation for understanding the link between photonic and electronic performance of 2D semiconducting layers, and demonstrates that they are not always correlated.