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Publication
Featured researches published by Susumu Omi.
Japanese Journal of Applied Physics | 2004
Shigetoshi Ito; Yukio Yamasaki; Susumu Omi; Kunihiro Takatani; Tomoki Ohno; Masaya Ishida; Yoshihiro Ueta; Takayuki Yuasa; Mototaka Taneya
AlGaInN violet laser diodes grown on GaN substrates have been studied. Waveguide simulations have been performed and perpendicular radiation angles have been investigated. A peculiar layer structure has been proposed to reduce the perpendicular radiation angle and compared with a conventional laser. The laser structure has an n-cladding layer consisting of three AlGaN films, the middle film of which has relatively high Al composition. A laser diode with an optimized structure has been fabricated. The threshold current density and slope efficiency have been 2.9 kA/cm2 and 1.4 W/A, respectively. The perpendicular radiation angle has been as small as 16.2°. The AlGaInN violet laser diode with a low aspect ratio of 1.6 and a small threshold current of 29 mA has been realized.
Archive | 2002
Yukio Yamasaki; Shigetoshi Ito; Susumu Omi
Archive | 2001
Daisuke Hanaoka; Shinya Ishida; Shigetoshi Ito; Takeshi Kamikawa; Susumu Omi; Yuzo Tsuda; 茂稔 伊藤; 有三 津田; 真也 石田; 剛 神川; 大介 花岡; 晋 近江
Archive | 2004
Yukio Yamasaki; Shigetoshi Ito; Susumu Omi
Archive | 1998
Shigetoshi Ito; Susumu Omi; 茂稔 伊藤; 晋 近江
Physica Status Solidi (a) | 2003
Shigetoshi Ito; Yukio Yamasaki; Susumu Omi; Kunihiro Takatani; Tomoki Ohno; Masaya Ishida; Yoshihiro Ueta; Takayuki Yuasa; Mototaka Taneya
Archive | 2004
Tomoki Ono; Shigetoshi Ito; Susumu Omi
Archive | 2002
Yukio Yamasaki; Tomoki Ono; Shigetoshi Ito; Susumu Omi
Archive | 2013
Tomoki Ono; Shigetoshi Ito; Susumu Omi
Archive | 2000
Susumu Omi; Kunihiro Takatani; 晋 近江; 邦啓 高谷
Collaboration
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