Sven Barth

Ultralow power consumption gas sensors based on self-heated individual nanowires

Dissipated power in metal oxide nanowires (rNW<45 nm) often causes important self-heating effects and as a result, undesired aging and failure of the devices. Nevertheless, this effect can be used to optimize the sensing conditions for the detection of various gaseous species, avoiding the requirement of external heaters. In this letter, the sensing capabilities of self-heated individual SnO2 nanowires toward NO2 are presented. These proof-of-concept systems exhibited responses nearly identical to those obtained with integrated microheaters, demonstrating the feasibility of taking advantage of self-heating in nanowires to develop ultralow power consumption integrated devices.

Portable microsensors based on individual SnO2 nanowires

Individual SnO(2) nanowires were integrated in suspended micromembrane-based bottom-up devices. Electrical contacts between the nanowires and the electrodes were achieved with the help of electron- and ion-beam-assisted direct-write nanolithography processes. The stability of these nanomaterials was evaluated as function of time and applied current, showing that stable and reliable devices were obtained. Furthermore, the possibility of modulating their temperature using the integrated microheater placed in the membrane was also demonstrated, enabling these devices to be used in gas sensing procedures. We present a methodology and general strategy for the fabrication and characterization of portable and reliable nanowire-based devices.

Defect transfer from nanoparticles to nanowires.

Metal-seeded growth of one-dimensional (1D) semiconductor nanostructures is still a very active field of research, despite the huge progress which has been made in understanding this fundamental phenomenon. Liquid growth promoters allow control of the aspect ratio, diameter, and structure of 1D crystals via external parameters, such as precursor feedstock, temperature, and operating pressure. However the transfer of crystallographic information from a catalytic nanoparticle seed to a growing nanowire has not been described in the literature. Here we define the theoretical requirements for transferring defects from nanoparticle seeds to growing semiconductor nanowires and describe why Ag nanoparticles are ideal candidates for this purpose. We detail in this paper the influence of solid Ag growth seeds on the crystal quality of Ge nanowires, synthesized using a supercritical fluid growth process. Significantly, under certain reaction conditions {111} stacking faults in the Ag seeds can be directly transferred to a high percentage of <112>-oriented Ge nanowires, in the form of radial twins in the semiconductor crystals. Defect transfer from nanoparticles to nanowires could open up the possibility of engineering 1D nanostructures with new and tunable physical properties and morphologies.

The elastic moduli of oriented tin oxide nanowires.

Tin oxide nanowires (NWs) exhibit interesting electronic properties, which can be harnessed for applications in nanoelectronic devices and sensors. Oriented single crystalline tin oxide NWs were grown at 45 degrees from a titanium dioxide substrate. Their elastic properties were investigated in a two-point geometry using an atomic force microscope (AFM) coupled with a scanning electron microscope under ultrahigh vacuum conditions. Youngs modulus was calculated by bending individual NWs and measuring the force exerted on the AFM tip during force-displacement measurements. For the NWs investigated, having radial dimensions below 45 nm and length up to 1.2 microm, we found an average value of 100 +/- 20 GPa, which is below the theoretical predictions calculated for different SnO(2) single crystal orientations, yet consistent with the indentation moduli of nanobelts. Finally, we discuss the effects of the nanowire-cantilever configuration on the measured Youngs modulus.

Seedless growth of sub-10 nm germanium nanowires.

We report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small as 6 nm without the need for a metal catalyst. The nanowires, synthesized using the purpose-built precursor hexakis(trimethylsilyl)digermane, exhibit high aspect ratios (>1000) while maintaining a uniform core diameter along their length. Additionally, the nanowires are encased in an amorphous shell of material derived from the precursor, which acts to passivate their surfaces and isolates the Ge seed particles from which the nanowires grow. The diameter of the nanowires was found to depend on the synthesis temperature employed. Specifically, there is a linear relationship between the inverse radius of the nanowires and the synthesis temperature, which can be explained by a model for the size-dependent melting of simple metals.

Nanoscale Ferroelectric and Piezoelectric Properties of Sb2S3 Nanowire Arrays

We report the first observation of piezoelectricity and ferroelectricity in individual Sb(2)S(3) nanowires embedded in anodic alumina templates. Switching spectroscopy-piezoresponse force microscopy (SS-PFM) measurements demonstrate that individual, c-axis-oriented Sb(2)S(3) nanowires exhibit ferroelectric as well as piezoelectric switching behavior. Sb(2)S(3) nanowires with nominal diameters of 200 and 100 nm showed d(33(eff)) values around 2 pm V(-1), while the piezo coefficient obtained for 50 nm diameter nanowires was relatively low at around 0.8 pm V(-1). A spontaneous polarization (P(s)) of approximately 1.8 μC cm(-2) was observed in the 200 and 100 nm Sb(2)S(3) nanowires, which is a 100% enhancement when compared to bulk Sb(2)S(3) and is probably due to the defect-free, single-crystalline nature of the nanowires synthesized. The 180° ferroelectric monodomains observed in Sb(2)S(3) nanowires were due to uniform polarization alignment along the polar c-axis.

Localized growth and in situ integration of nanowires for device applications

Simultaneous localized growth and device integration of inorganic nanostructures on heated micromembranes is demonstrated for single crystalline germanium and tin oxide nanowires. Fully operating CO gas sensors prove the potential of the presented approach. With this simple CMOS compatible technique, issues of assembly, transfer and contact formation are addressed.

Gate voltage induced phase transition in magnetite nanowires

Since its discovery in 1939 the origin of the phase transition in magnetite (Fe3O4) has been an object of intensive research and great controversy. Here, electrical resistance measurements as a function of gate voltage have been performed on single-crystalline Fe3O4 nanowires, showing that high electric fields trigger the breakdown of the insulating phase into a highly conductive state. Furthermore, the Verwey transition itself is suppressed by the gate voltage.

Direct writing of CoFe alloy nanostructures by focused electron beam induced deposition from a heteronuclear precursor.

Recently, focused electron beam-induced deposition has been employed to prepare functional magnetic nanostructures with potential in nanomagnetic logic and sensing applications by using homonuclear precursor gases like Fe(CO)5 or Co2(CO)8. Here we show that an extension towards the fabrication of bi-metallic compounds is possible by using a single-source heteronuclear precursor gas. We have grown CoFe alloy magnetic nanostructures from the HFeCo3(CO)12 metal carbonyl precursor. The compositional analysis indicates that the samples contain about 80 at% of metal and 10 at% of carbon and oxygen. Four-probe magnetotransport measurements are carried out on nanowires of various sizes down to a width of 50 nm, for which a room temperature resistivity of 43 μΩcm is found. Micro-Hall magnetometry reveals that 50 nm × 250 nm nanobars of the material are ferromagnetic up to the highest measured temperature of 250 K. Finally, the transmission electron microscopy (TEM) microstructural investigation shows that the deposits consist of a bcc Co-Fe phase mixed with a FeCo2 O4 spinel oxide phase with nanograins of about 5 nm diameter.

An experimental method to estimate the temperature of individual nanowires

In this paper, the authors present an effective experimental method to estimate the temperature of individual metal oxide nanowires that can be used to quantify the heating produced in conductometric or other operating conditions. The here-proposed method is based on the analysis of the recovery time of the nanowires resistance after exposure to a gas pulse (0.5 ppm of NO2 in dry air). It is reproducible with different devices always with uncertainties below ±20°C in the temperature range (70-300°C) studied herein. The exploration of alternative gases and nanolithography techniques may help to extend its operating range and its applicability to other materials. In any case, the opportunity to probe temperatures at the nanoscale opens the door to a number of fundamental and applied advancements in the field of nanotechnology.