Sven Müller

Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures.

Semiconductors doped with magnetic ions, also known as dilute magnetic semiconductors, are both semiconducting and ferromagnetic. It remains unclear, however, whether this ferromagnetism is intrinsic, as is required for spintronic applications, or is due instead to dopant clustering. Here, we report conclusive evidence for intrinsic ferromagnetism in individual ZnO nanoparticles doped with transition metal ions. Through a simultaneous magnetic and microstructural characterization using electron magnetic chiral dichroism and channelling-enhanced electron energy loss microanalysis, respectively, we show that ZnO nanoparticles have intrinsic ferromagnetism when doped with cobalt, but not when doped with iron.

Wallerian degeneration: a major component of early axonal pathology in multiple sclerosis.

Axonal loss is a major component of the pathology of multiple sclerosis (MS) and the morphological basis of permanent clinical disability. It occurs in demyelinating plaques but also in the so‐called normal‐appearing white matter (NAWM). However, the contribution of Wallerian degeneration to axonal pathology is not known. Here, we analyzed the extent of Wallerian degeneration and axonal pathology in periplaque white matter (PPWM) and lesions in early multiple sclerosis biopsy tissue from 63 MS patients. Wallerian degeneration was visualized using an antibody against the neuropeptide Y receptor Y1 (NPY‐Y1R). The number of SMI‐32‐positive axons with non‐phosphorylated neurofilaments was significantly higher in both PPWM and plaques compared to control white matter. APP‐positive, acutely damaged axons were found in significantly higher numbers in plaques compared to PPWM. Strikingly, the number of NPY‐Y1R‐positive axons undergoing Wallerian degeneration was significantly higher in PPWM and plaques than in control WM. NPY‐Y1R‐positive axons in PPWM were strongly correlated to those in the lesions. Our results show that Wallerian degeneration is a major component of axonal pathology in the periplaque white matter in early MS. It may contribute to radiological changes observed in early MS and most likely plays a major role in the development of disability.

Structural impact of Mn implantation on ZnO

We present a systematic analysis of the structural properties of Mn implanted ZnO by Raman scattering and complementary methods in the Mn composition range 0.2?8?at.% (relative to Zn) with an implantation step profile of about 300?nm depth. Mn ions are substitutionally incorporated on Zn sites in the ZnO wurtzite lattice and no secondary phases are detected. Beside the common eigenmodes of the ZnO host lattice, we observe additional modes related to the Mn implantation, which are studied for different Mn concentrations and annealing procedures. We distinguish between implantation damage and impurity induced disorder, and also show that the spectral feature which is often assigned to a Mn local vibrational mode (LVM) in ZnO consists of two separate modes. We present evidence that only one of these features is a candidate for a LVM.

Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires

Zinc oxide nanowires were grown by vapor transport using the vapor-liquid-solid growth mechanism. The zinc oxide nanowires were implanted with transition metals (Co, Fe or Ni) and subsequently annealed in air at 700 degrees C for 30 min. Energy-dispersive x-ray spectroscopy and electron energy loss spectroscopy measurements reveal a successful incorporation of the desired transition metals. Transmission electron microscopy analysis of implanted and annealed zinc oxide nanowires shows a strongly damaged zinc oxide lattice but no formation of transition metal-rich secondary phases. The as-grown nanowires show a strong and intensive near-band edge emission and a moderately structured green luminescence band. After ion implantation, the structured green luminescence band increases in intensity and new sharp luminescence lines appear in the red luminescence region. Those sharp transitions are due to intra-shell 3d transitions of iron and cobalt in the corresponding Fe- and Co-doped ZnO samples.

Diffusion, convection, and solidification in cw-mode free electron laser nitrided titanium

Titanium sheets were irradiated by free electron laser radiation in cw mode in pure nitrogen. Due to the interaction, nitrogen diffusion occurs and titanium nitride was synthesized in the tracks. Overlapping tracks have been utilized to create coatings in order to improve the tribological properties of the sheets. Caused by the local heating and the spatial dimension of the melt pool, convection effects were observed and related to the track properties. Stress, hardness, and nitrogen content were investigated with x-ray diffraction, nanoindention, and resonant nuclear reaction analysis. The measured results were correlated with the scan parameters, especially to the lateral track shift. Cross section micrographs were prepared and investigated by means of scanning electron microscopy. They show the solidification behavior, phase formation, and the nitrogen distribution. The experiments give an insight into the possibilities of materials processing using such a unique heat source.

The influence of local heating by nonlinear pulsed laser excitation on the transmission characteristics of a ZnO nanowire waveguide

We perform a transmission experiment on a ZnO nanowire waveguide to study its transmission characteristics under nonlinear femtosecond-pulse excitation. We find that both the second harmonic and the photoluminescence couple into low-order waveguide modes of the nanowires but with distinctly different efficiencies. We measure the transmission spectrum of a single ZnO nanowire waveguide for near-UV light generated by interband recombination processes. The transmission spectrum allows us to determine the absorption edge of the excited nanowire and to study the temperature profile of the nanowire under femtosecond-pulse excitation.

Properties of V-implanted ZnO nanorods

ZnO nanorods were grown on Si substrates by an aqueous chemical approach and subsequently doped by V implantation. Transmission electron microscopy and photoluminescence spectroscopy reveal a severely defective material directly after the implantation process. Subsequent annealing leads to a partial recovery of the crystal structure. The magnetic features of ZnO:V nanorods were investigated by magnetic force microscopy. Images taken of ensembles as well as of single rods clearly display contrast, which is seen as a strong indication of ferromagnetism at room temperature.

Modeling the Carrier Mobility in Nanowire Channel FET

We report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm 2 /Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm 2 /Vs.