Sven Rühle

Quantum-Dot-Sensitized Solar Cells

Quantum-dot-sensitized solar cells (QDSCs) are a promising low-cost alternative to existing photovoltaic technologies such as crystalline silicon and thin inorganic films. The absorption spectrum of quantum dots (QDs) can be tailored by controlling their size, and QDs can be produced by low-cost methods. Nanostructures such as mesoporous films, nanorods, nanowires, nanotubes and nanosheets with high microscopic surface area, redox electrolytes and solid-state hole conductors are borrowed from standard dye-sensitized solar cells (DSCs) to fabricate electron conductor/QD monolayer/hole conductor junctions with high optical absorbance. Herein we focus on recent developments in the field of mono- and polydisperse QDSCs. Stability issues are adressed, coating methods are presented, performance is reviewed and special emphasis is given to the importance of energy-level alignment to increase the light to electric power conversion efficiency.

Energy Level Alignment in CdS Quantum Dot Sensitized Solar Cells Using Molecular Dipoles

The energy levels of CdS quantum dots (QDs) can be shifted in a systematic fashion with respect to the TiO(2) bands using molecular dipoles. Dipole moments pointing toward the QD surface shift the energy levels toward the vacuum level (a), thus enabling electron injection from excited QD states into the TiO(2) conduction band at lower photon energies compared to QDs with adsorbed molecular dipoles which are pointing away from the QD surface (b). In CdS QD sensitized solar cells this leads to a dipole dependent shift of the photovoltage onset and the photocurrent.

All-Oxide Photovoltaics

Recently, a new field in photovoltaics (PV) has emerged, focusing on solar cells that are entirely based on metal oxide semiconductors. The all-oxide PV approach is very attractive due to the chemical stability, nontoxicity, and abundance of many metal oxides that potentially allow manufacturing under ambient conditions. Already today, metal oxides (MOs) are widely used as components in PV cells such as transparent conducting front electrodes or electron-transport layers, while only very few MOs have been used as light absorbers. In this Perspective, we review recent developments of all-oxide PV systems, which until today were mostly based on Cu2O as an absorber. Furthermore, ferroelectric BiFeO3-based PV systems are discussed, which have recently attracted considerable attention. The performance of all-oxide PV cells is discussed in terms of general PV principles, and directions for progress are proposed, pointing toward the development of novel metal oxide semiconductors using combinatorial methods.

Quantum efficiency and bandgap analysis for combinatorial photovoltaics: sorting activity of Cu-O compounds in all-oxide device libraries.

All-oxide-based photovoltaics (PVs) encompass the potential for extremely low cost solar cells, provided they can obtain an order of magnitude improvement in their power conversion efficiencies. To achieve this goal, we perform a combinatorial materials study of metal oxide based light absorbers, charge transporters, junctions between them, and PV devices. Here we report the development of a combinatorial internal quantum efficiency (IQE) method. IQE measures the efficiency associated with the charge separation and collection processes, and thus is a proxy for PV activity of materials once placed into devices, discarding optical properties that cause uncontrolled light harvesting. The IQE is supported by high-throughput techniques for bandgap fitting, composition analysis, and thickness mapping, which are also crucial parameters for the combinatorial investigation cycle of photovoltaics. As a model system we use a library of 169 solar cells with a varying thickness of sprayed titanium dioxide (TiO2) as the window layer, and covarying thickness and composition of binary compounds of copper oxides (Cu–O) as the light absorber, fabricated by Pulsed Laser Deposition (PLD). The analysis on the combinatorial devices shows the correlation between compositions and bandgap, and their effect on PV activity within several device configurations. The analysis suggests that the presence of Cu4O3 plays a significant role in the PV activity of binary Cu–O compounds.

A two junction, four terminal photovoltaic device for enhanced light to electric power conversion using a low-cost dichroic mirror

A low-cost dichroic mirror can be used successfully for solar spectrum splitting to enhance solar to electrical energy conversion. The mirror is optimized for use with a polycrystalline silicon photovoltaic cell pc-Si. With the dichroic mirror simultaneous excitation of a medium-efficient 11.1% commercial pc-Si and a custommade high band gap GaInP cell 12.3%, yields 16.8% efficiency, with both cells operating at maximum power. Our results clearly show that what is missing for this simple low-cost enhancement of Si solar cell efficiency are low-cost high band gap cells.

Unpredicted electron injection in CdS/CdSe quantum dot sensitized ZrO2 solar cells

A quantum dot sensitized solar cell based on a porous ZrO(2) film, sensitized with CdSe quantum dots using CdS as an intermediate layer is presented. We observe electron injection from photo-excited quantum dots into the ZrO(2), which is unexpected due to the much higher conduction band edge (closer to the vacuum level) of bulk ZrO(2) compared to TiO(2).

Contact-free photovoltage measurements of photoabsorbers using a Kelvin probe

A contact-free method to measure the photovoltage that can be generated by an absorber, upon illumination, is presented. The measurement is based on Kelvin’s well-known capacitor method which measures the contact potential difference that builds up between two sufficiently conducting materials of different work function that are electrically connected. We show that the photovoltage of an absorber, which is introduced into the Kelvin capacitor, can be measured accurately, even though it is not in electrical contact to any of the capacitor plates. Comparative measurements of the surface photovoltage of an n-type Si semiconductor surface in grounded and nongrounded mode as well as the interface photovoltage of mesoporous TiO2, deposited onto a conducting substrate, are presented to demonstrate the feasibility of the concept. This approach enables to measure the photovoltage of complete solar cells and also its single components (absorber, absorber + buffer layer, absorber + buffer layer + electron and∕or hol...

Four-point probe electrical resistivity scanning system for large area conductivity and activation energy mapping

The electrical properties of metal oxides play a crucial role in the development of new photovoltaic (PV) systems. Here we demonstrate a general approach for the determination and analysis of these properties in thin films of new metal oxide based PV materials. A high throughput electrical scanning system, which facilitates temperature dependent measurements at different atmospheres for highly resistive samples, was designed and constructed. The instrument is capable of determining conductivity and activation energy values for relatively large sample areas, of about 72 × 72 mm(2), with the implementation of geometrical correction factors. The efficiency of our scanning system was tested using two different samples of CuO and commercially available Fluorine doped tin oxide coated glass substrates. Our high throughput tool was able to identify the electrical properties of both resistive metal oxide thin film samples with high precision and accuracy. The scanning system enabled us to gain insight into transport mechanisms with novel compositions and to use those insights to make smart choices when choosing materials for our multilayer thin film all oxide photovoltaic cells.

CHAPTER 8:All-oxide Photovoltaics

Recently a new field in photovoltaics (PV) is emerging, focusing on solar cells that are entirely based on metal oxide semiconductors. The all-oxide PV approach is very attractive due to the chemical stability, non-toxicity and abundance of many metal oxides that potentially allow manufacturing under ambient conditions. Metal oxides (MOs) are today widely used as components in PV cells such as transparent conducting front electrodes or electron transport layers, while only very few MOs have been used as light absorbers. In this chapter we review recent developments of all-oxide PV systems, which until today are mostly based on Cu2O as a light absorber. Furthermore, new PV systems based on Bi2O3, Fe2O3 or ferroelectric BiFeO3 are discussed, which have recently attracted considerable attention. The performance of all-oxide PV cells is discussed in terms of general photovoltaic principles and directions for progress are proposed pointing towards the development of novel metal oxide semiconductors using combinatorial methods.