T. Andrearczyk

Carrier-induced ferromagnetism in p − Zn 1 − x Mn x Te

We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped

Spin-related magnetoresistance of n -type ZnO:Al and Zn 1 − x Mn x O : Al thin films

{\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{Te}

Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films

epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance, and spin-dependent Hall effect measurements. The experimental findings compare favorably, without adjustable parameters, with the prediction of the Rudermann-Kittel-Kasuya-Yosida (RKKY) model or its continuous-medium limit, that is, the Zener model, provided that the presence of the competing antiferromagnetic spin-spin superexchange interaction is taken into account, and the complex structure of the valence band is properly incorporated into the calculation of the spin susceptibility of the hole liquid. In general terms, the findings demonstrate how the interplay between the ferromagnetic RKKY interaction, carrier localization, and intrinsic antiferromagnetic superexchange affects the ordering temperature and the saturation value of magnetization in magnetically and electrostatically disordered systems.

Intermediate phase at the metal-insulator boundary in a magnetically doped two-dimensional electron system

Effects of spin-orbit and

Temperature and size scaling of the QHE resistance: the case of large spin splitting

s\text{\ensuremath{-}}d

Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn) As epitaxial layers

exchange interactions are probed by magnetoresistance (MR) measurements carried out down to

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

50\phantom{\rule{0.3em}{0ex}}\mathrm{mK}

Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

on ZnO and

Resistively detected EPR of Mn2+ ions coupled to the 2DEG in the quantum Hall regime

{\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{O}

Magnetic domain wall manipulation in (Ga,Mn)As nanostructures for spintronic applications

with