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Dive into the research topics where T. Bohnen is active.

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Featured researches published by T. Bohnen.


Journal of Applied Physics | 2011

Realising epitaxial growth of GaN on (001) diamond

G.W.G. van Dreumel; Paul Tinnemans; A.A.J. van den Heuvel; T. Bohnen; Josephus Gerardus Buijnsters; J. J. ter Meulen; W.J.P. van Enckevort; P.R. Hageman; E. Vlieg

By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) 〈 101− 0〉 GaN∥ (001)[110] diamond and (0001) 〈 101− 0〉 GaN∥ (001) [11−0] diamond, which are 90∘ rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2×1) and (1×2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, ...


Journal of Crystal Growth | 2008

HVPE of scandium nitride on 6H-SiC(0001)

James H. Edgar; T. Bohnen; P.R. Hageman


Diamond and Related Materials | 2009

Growth of GaN on nano-crystalline diamond substrates

G.W.G. van Dreumel; Josephus Gerardus Buijnsters; T. Bohnen; J. J. ter Meulen; P.R. Hageman; W.J.P. van Enckevort; Elias Vlieg


Journal of Crystal Growth | 2009

ScAlN nanowires : A cathodoluminescence study

T. Bohnen; Gholamreza Yazdi; Rositsa Yakimova; G.W.G. van Dreumel; P.R. Hageman; Elias Vlieg; Rienk E. Algra; Marcel A. Verheijen; James H. Edgar


Journal of Crystal Growth | 2009

On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes

T. Bohnen; Aryan E. F. de Jong; Willem J. P. van Enckevort; J.L. Weyher; Gerbe W.G. van Dreumel; H. Ashraf; P.R. Hageman; Elias Vlieg


Diamond and Related Materials | 2010

Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates

G.W.G. van Dreumel; T. Bohnen; Josephus Gerardus Buijnsters; W.J.P. van Enckevort; J. J. ter Meulen; P.R. Hageman; E. Vlieg


Journal of Crystal Growth | 2010

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

T. Bohnen; H. Ashraf; Gerbe W.G. van Dreumel; Sjoerd Verhagen; J.L. Weyher; P.R. Hageman; E. Vlieg


Journal of Crystal Growth | 2007

Influence of In on the surface morphology of HVPE grown GaN

C.E.C. Dam; P.R. Hageman; W.J.P. van Enckevort; T. Bohnen; P.K. Larsen


Physica Status Solidi (c) | 2010

The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates

T. Bohnen; Gerbe W.G. van Dreumel; J.L. Weyher; Willem J. P. van Enckevort; H. Ashraf; Aryan E. F. de Jong; P.R. Hageman; Elias Vlieg


Physica Status Solidi (a) | 2009

Growth of scandium aluminum nitride nanowires on scn(111) films on 6h-sic substrates by HVPE

T. Bohnen; Gerbe W.G. van Dreumel; P.R. Hageman; Rienk E. Algra; Willem J. P. van Enckevort; Elias Vlieg; Marcel A. Verheijen; James H. Edgar

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P.R. Hageman

Radboud University Nijmegen

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Elias Vlieg

Radboud University Nijmegen

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G.W.G. van Dreumel

Radboud University Nijmegen

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E. Vlieg

Radboud University Nijmegen

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H. Ashraf

Radboud University Nijmegen

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J. J. ter Meulen

Radboud University Nijmegen

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