T. Domański
Maria Curie-Skłodowska University
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Publication
Featured researches published by T. Domański.
Physical Review B | 2007
T. Domański; A. Donabidowicz; K. I. Wysokiński
We analyze the charge transport through a single level quantum dot coupled to a normal and superconducting lead where the electron pairs exist either as the coherent (for temperatures below
Journal of Physics: Condensed Matter | 2013
J. Barański; T. Domański
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Scientific Reports | 2016
T. Domański; I. Weymann; M. Baranska; G. Gorski
) or incoherent objects (in a region
Physical Review B | 2013
G. Michałek; Bogdan R. Bułka; T. Domański; Karol I. Wysokinski
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Physical Review B | 2017
Andrzej Ptok; Aksel Kobiałka; T. Domański
). Practically, this situation can be encountered using the high
Physical Review B | 2008
T. Domański; A. Donabidowicz; K. I. Wysokiński
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Physical Review B | 2003
T. Domański; Maciej M. Maśka; Marcin Mierzejewski
superconducting materials where precursor effects have been observed upon approaching
Physical Review B | 2002
T. Domański
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Journal of Physics: Condensed Matter | 2010
J Krzyszczak; T. Domański; K I Wysokiński; R Micnas; S Robaszkiewicz
from above. Without restricting to any particular microscopic mechanism, we investigate the qualitative properties of nonequilibrium charge current caused by the electron pair coherence.
Physical Review B | 2004
T. Domański; J. Ranninger
We study the in-gap states of a quantum dot hybridized with one conducting and another superconducting electrode. The proximity effect suppresses the electronic states in the entire subgap regime |ω| < Δ, where Δ denotes the energy gap of the superconductor. The Andreev scattering mechanism can induce, however, some in-gap states whose line-broadening (inverse life-time) is controlled by the hybridization of the quantum dot with the normal electrode. We show that the number of such Andreev bound states is substantially dependent on the competition between the Coulomb repulsion and the induced on-dot pairing. We discuss the signatures of these in-gap states in the tunneling conductance, especially in a low-bias regime.