T. Kammermeier

Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN

The structural and the magnetic properties of Gd-focused ion-beam-implanted GaN layers are studied. Gd3+ ions were uniformly implanted in molecular beam epitaxy grown GaN layers at room temperature with an energy of 300keV at doses ranging from 2.4×1011to1.0×1015cm−2 which corresponds to an average Gd concentration range of 2.4×1016–1.0×1020cm−3. The implanted samples were not subjected to any annealing treatment. No secondary phase related to Gd was detected by x-ray diffraction in these layers. Magnetic characterization with superconducting quantum interference device reveals a colossal magnetic moment of Gd and ferromagnetism with an order temperature above room temperature similar to that found in epitaxially grown Gd-doped GaN layers. The effective magnetic moment per Gd atom in these samples is, however, found to be an order of magnitude larger than that found in epitaxially grown layers for a given Gd concentration which indicates that the defects play an important role in giving rise to this effect.

Advanced spectroscopic synchrotron techniques to unravel the intrinsic properties of dilute magnetic oxides: the case of Co:ZnO

The use of synchrotron-based spectroscopy has revolutionized the way we look at matter. X-ray absorption spectroscopy (XAS) using linear and circular polarized light offers a powerful toolbox of element-specific structural, electronic and magnetic probes that is especially well suited for complex materials containing several elements. We use the specific example of Zn1−xCoxO (Co:ZnO) to demonstrate the usefulness of combining these XAS techniques to unravel its intrinsic properties. We demonstrate that as long as phase separation or excessive defect formation is absent, Co:ZnO is paramagnetic. We can establish quantitative thresholds based on four reliable quality indicators using XAS; samples that show ferromagnet-like behaviour fail to meet these quality indicators, and complementary experimental techniques indeed prove phase separation. Careful analysis of XAS spectra is shown to provide quantitative information on the presence and type of dilute secondary phases in a highly sensitive, non-destructive manner.

Element specific investigations of the structural and magnetic properties of Gd:GaN

The authors present element specific measurements of the x-ray linear dichroism and the x-ray magnetic circular dichroism (XMCD) on Gd:GaN samples. They can show that the majority of the Gd dopant atoms goes to substitutional Ga sites and that a small XMCD is detectable for Gd. There are significant deviations of the magnetic hysteresis recorded for Gd compared to superconducting quantum interference device measurements. Our measurements show that the magnetic signal from the Gd dopant atom itself is rather small highlighting the role of magnetic contributions of the GaN host crystal.

Structural, magnetic, and optical properties of Co- and Gd-implanted ZnO(0001) substrates

ZnO(0001) substrates were ion implanted with 100 keV of Co and 300 keV of Gd at different fluences ranging from 5×1013–1×1015/cm2. The resulting Co:ZnO and Gd:ZnO samples were analyzed with respect to their structural, magnetic, and optical properties. The effect of annealing at 350 °C on the structure and the resulting magnetic and optical properties were investigated as well. For Co:ZnO hardly any changes were observable, neither in the structural nor in the magnetic properties, even though the existence of substitutional Co2+ in the ZnO lattice could be shown by means of low temperature photoluminescence especially for Zn-annealed samples. For the much larger Gd ion the implantation leads to a changed crystal structure, which leads to a ferromagneticlike behavior for higher implantation doses, which could even be enhanced by annealing in vacuum. Ferromagnetic behavior in annealed Gd:ZnO is corroborated by ferromagnetic resonance measurements at low temperatures. The distinct behavior of Gd- and Co-impl...

Structural, chemical and magnetic properties of secondary phases in Co-doped ZnO

We have utilized a comprehensive set of experimental techniques such as transmission electron microscopy (TEM) and synchrotron-based x-ray absorption spectroscopy (XAS) and the respective x-ray linear dichroism and x-ray magnetic circular dichroism to characterize the correlation of structural, chemical and magnetic properties of Co-doped ZnO samples. It can be established on a quantitative basis that the superparamagnetic (SPM) behavior observed by integral superconducting quantum interference device magnetometry is not an intrinsic property of the material but stems from precipitations of metallic Co. Their presence is revealed by TEM as well as XAS. Annealing procedures for these SPM samples were also studied, and the observed changes in the magnetic properties found to be due to a chemical reduction or oxidation of the metallic Co species.

Magnetic and structural properties of Gd-implanted zinc-blende GaN

Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300keV Gd3+ ions for doses ranging from 1×1012to1×1015cm−2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.

Magnetic properties of epitaxial CrN films

The authors have investigated the structural and magnetic properties of CrN films grown on MgO(001) and sapphire(0001) by rf-plasma-assisted molecular beam epitaxy. CrN∕MgO(001) exhibits a better epitaxial quality than CrN/sapphire(0001). The CrN∕MgO film shows clear paramagnetic behavior at low temperatures, whereas CrN/sapphire exhibits a ferromagneticlike response with an order temperature above room temperature which resembles the magnetic behavior found in Cr-doped dilute magnetic semiconductors. Keeping in mind that bulk CrN exhibits antiferromagnetic behavior, the dramatically different magnetic behaviors found in epitaxial CrN films grown on MgO and sapphire demonstrate the importance of epitaxial constraints in determining their magnetic properties.

Nonferromagnetic nanocrystalline ZnO:Co thin films doped with Zn interstitials

ZnCoO thin films were synthesized via a wet chemical route and subsequently annealed in Zn vapor to increase the conductivity by introducing Zn interstitials. All samples show small hysteresis loops close to the detection limit of the magnetometer. Thus the samples were thoroughly investigated to obtain evidence for further ferromagneticlike behavior. Optical and magneto-optical experiments show the crystal field transitions of Co2+ in the near infrared and visible spectral range. At energies above 2.8 eV a charge transfer transition of Co2+ is observed. The results of magnetotransport measurements are explained by the formation of an impurity band situated below the conduction band. No further evidence for ferromagnetism is obtained.

Metastable magnetism and memory effects in dilute magnetic semiconductors

Detailed magnetic measurements on the dilute magnetic semiconductors (DMS) Cr:InN and Gd:GaN are carried out. These two materials have previously been reported to exhibit room temperature magnetic order. We show that the existence of magnetic hysteresis cannot be taken as proof for conventional ferromagnetism. Instead, we find an unparalleled metastable magnetic behavior together with memory effects in both materials, suggesting that for most DMS metastability plays a crucial role in accounting for the magnetic order even at elevated temperatures up to 400 K.