T. N. Danilova

Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures

Comparative study of threshold current temperature dependence, differential quantum efficiency and light polarization was performed for type I and type II InAsSb/InAsSbP heterostructures as well as for tunneling- injection GaInAsSb/InGaAsSb laser based on this type II broken-gap heterojunction. Experimental evidence of non- radiative Auger-recombination suppression in type II InAsSb/InAsSbP heterolasers with high band-offset ratio (Delta) Ev/(Delta) Ec equals 3.4 was obtained. Reduction of temperature dependence of the threshold current was demonstrated for both kinds of type II lasers. Maximum operation temperature and characteristic temperature T equals 203 K with T0 equals 40 K and T equals 195 K with T0 equals 47 K were achieved for type II InAsSb/InAsSbP and tunneling- injection p-GaInAsSb/n-InGaAsSb lasers, respectively.

Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers due to nonlinear optical effects

Abstract InAsSb/InAsSbP double heterostructure diode lasers for the spectral range of 3.3 μm grown by liquid phase epitaxy have been investigated. Emission spectra, far-field patterns and wavelength tuning versus current have been studied in the wide current range from threshold value I th up to 3 I th , at the temperature of liquid nitrogen. Controlled by current wavelength tuning in single-mode lasing has been obtained both towards the shorter wavelengths (up to 4.56 cm −1 ) and towards the longer wavelengths (up to 0.9 cm −1 ) at the temperature T =77 K. Comparison of the emission properties of the lasers, driven by different types of current (short pulse current, sawtooth pulse current and in quasi cw regime) showed the same quantum-mechanical nature of current tuning. The theoretical model of this nonlinear optical phenomenon is proposed. The estimated times of current tuning defined mainly by the photon lifetime in the cavity are about 10 −9 –10 −12 s.