T. S. Kulmala

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

Inkjet-printed graphene electronics.

We demonstrate inkjet printing as a viable method for large-area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to ∼95 cm(2) V(-1) s(-1), as well as transparent and conductive patterns, with ∼80% transmittance and ∼30 kΩ/□ sheet resistance. This paves the way to all-printed, flexible, and transparent graphene devices on arbitrary substrates.

2 μm solid-state laser mode-locked by single-layer graphene

We report a 2 μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited ∼410 fs pulses, with a spectral width ∼11.1 nm at 2067 nm. The maximum average output power is 270 mW, at a pulse repetition frequency of 110 MHz. This is a convenient high-power transform-limited ultrafast laser at 2 μm for various applications, such as laser surgery and material processing.

Transport Conductivity of Graphene at RF and Microwave Frequencies

We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current conductivity is the same as the DC value and the imaginary part~0. The graphene channel is modelled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time~2.1ps, highlighting the influence of alternating current (AC) electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analogue field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.

Self-aligned coupled nanowire transistor.

The integration of multiple functionalities into individual nanoelectronic components is increasingly explored as a means to step up computational power, or for advanced signal processing. Here, we report the fabrication of a coupled nanowire transistor, a device where two superimposed high-performance nanowire field-effect transistors capable of mutual interaction form a thyristor-like circuit. The structure embeds an internal level of signal processing, showing promise for applications in analogue computation. The device is naturally derived from a single NW via a self-aligned fabrication process.

Wavelength tunable graphene modelocked VECSEL

We passively modelock an optically pumped VECSEL by using a single-layer graphene saturable absorber mirror, resulting in pulses as short as 473 fs. A broad wavelength tuning range of 46 nm is achieved with three different VECSEL chips, with a single chip 21 nm are covered.

High throughput lithography using thermal scanning probes

Thermal scanning probe lithography (t-SPL) has demonstrated unique capabilities for maskless lithography. A heated atomic force microscope tip is used to locally remove a thermally sensitive resist. This process is able to fabricate precise 3D patterns and high resolution structures without the use of charged particles, such as electrons, which have been implicated in substrate damage. Here we outline our work to improve the throughput of t-SPL via integration with a laser writer for the patterning of large features and the development of independently addressable cantilever arrays.

Single-nanometer accurate 3D nanoimprint lithography with master templates fabricated by NanoFrazor lithography

Nanoimprint lithography (NIL) is one of the most promising technology platforms for replication of nanometer and micrometer scale 3D topographies with extremely high resolution and throughput, as needed for e.g. photonic or optical applications. One of the remaining challenges of 3D NIL, however, is the fabrication of high quality 3D master originals – the initial patterns that are replicated multiple times in the NIL process. Here, we demonstrate a joint solution for 3D NIL where NanoFrazor thermal scanning probe lithography (t-SPL) is used to pattern the master templates with singlenanometer accurate 3D topographies. 3D topographies from polymer resist master templates are replicated using a HERCULES NIL system with SmartNIL technology. Furthermore, 3D patterns are transferred from the resist into a silicon substrate via reactive ion etching (RIE) and the resulting silicon master template is used for producing polymeric working stamps into OrmoStamp and, finally, replicas into optical grade OrmoClearFX material. Both replication strategies result in very high-quality replicas of the original patterns.

Graphene saturable absorbers for VECSELs

We report mode-locking of an optically pumped VECSEL using a graphene-based saturable absorber mirror (GSAM). Self-starting and stable modelocked operation is demonstrated with 473 fs pulses at 1.5 GHz repetition rate and 949 nm center wavelength. Wavelength tuning is achieved over a 46 nm bandwidth. We discuss the mirror design, the fabrication of the GSAMs, and give an outlook on further optimization of the design, including dielectric top coatings to protect the graphene and to increase the flexibility in the design.

Graphene modelocked VECSELs

In the past decade, passively modelocked optically pumped vertical external cavity surface emitting lasers (OPVECSELs), sometimes referred to as semiconductor disk lasers (OP-SDLs), impressively demonstrated the potential for generating femtosecond pulses at multi-Watt average output powers with gigahertz repetition rates. Passive modelocking with a semiconductor saturable absorber mirror (SESAM) is well established and offers many advantages such as a flexible design of the parameters and low non-saturable losses. Recently, graphene has emerged as an attractive wavelength-independent alternative saturable absorber for passive modelocking in various lasers such as fiber or solid-state bulk lasers because of its unique optical properties. Here, we present and discuss the modelocked VECSELs using graphene saturable absorbers. The broadband absorption due to the linear dispersion of the Dirac electrons in graphene makes this absorber interesting for wavelength tunable ultrafast VECSELs. Such widely tunable modelocked sources are in particularly interesting for bio-medical imaging applications. We present a straightforward approach to design the optical properties of single layer graphene saturable absorber mirrors (GSAMs) suitable for passive modelocking of VECSELs. We demonstrate sub-500 fs pulses from a GSAM modelocked VECSEL. The potential for broadband wavelength tuning is confirmed by covering 46 nm in modelocked operation using three different VECSEL chips and up to 21 nm tuning in pulsed operation is achieved with one single gain chip. A linear and nonlinear optical characterization of different GSAMs with different absorption properties is discussed and can be compared to SESAMs.