T. Terashima

Magnetic phase diagram and the pressure and field dependence of the Fermi surface in UGe 2

The ac susceptibility and de Haas\char21{}van Alphen (dHvA) effect in

Bulk quantum Hall effect in {eta}-Mo{sub 4}O{sub 11}

{\mathrm{UGe}}_{2}

De Haas-van Alphen effect study of CeRu2Si2

are measured at pressures P up to 17.7 kbar for the magnetic field B parallel to the a axis, which is the easy axis of magnetization. Two anomalies are observed at

dHvA effect of CeRu2Si2 under pressure

{B}_{x}(P)

Field-induced transition of f electron nature in CeRu2Si2

and

Electronic state of magnetic organic conductor (Me-3,5-DIP)[Ni(dmit)2]2

{B}_{m}(P)

dHvA oscillations and high-field magnetoresistance in U2Rh3Si5

{(B}_{x}g{B}_{m}

Magnetic breakdown and Fermi surface nesting in the organic conductor (BEDT-TTF)2TIHg(SCN)4

at any

Anomalous behavior of the dHvA oscillations in CexLa1−xRu2Si2

P),