T. V. Menshchikova

Unoccupied topological states on bismuth chalcogenides

The unoccupied part of the band structure of topological insulators Bi

The effect of van der Waal's gap expansions on the surface electronic structure of layered topological insulators

_2

Band structure engineering in topological insulator based heterostructures.

Te

Ternary Compounds Based on Binary Topological Insulators As an Efficient Way for Modifying the Dirac Cone

_{x}

On the origin of two-dimensional electron gas states at the surface of topological insulators

Se

Ab initio study of 2DEG at the surface of topological insulator Bi2Te3

_{3-x}

Modelling near-surface bound electron states in a 3D topological insulator: analytical and numerical approaches

(

Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI.

x=0,2,3

Pressure effects on crystal and electronic structure of bismuth tellurohalides

) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly-dispersing surface states are found at the center of the surface Brillouin zone at energies around 1.3 eV above the Fermi level. Theoretical analysis shows that this feature appears in a spin-orbit-interaction induced and inverted local energy gap. This inversion is insensitive to variation of electronic and structural parameters in Bi

New topological surface state in layered topological insulators: Unoccupied dirac cone

_2