T. W. Fraser Russell

Chemical reaction analysis of copper indium selenization

A chemical reaction analysis of the selenization of copper indium layers to form copper indium diselenide is presented. Time-progressive selenization reactions were carried out in a laminar flow tubular reactor in a dilute H2Se atmosphere at 400°C. Copper, indium and copper-indium thin films were reacted for 1–60 min. The reacted films are analyzed by x-ray diffraction and atomic absorption spectrophotometry to identify the chemical species present in the reacted films. A reaction network for film formation is proposed and data from time-progressive selenizations were analyzed to obtain species composition profiles. Rate expressions are postulated and a mathematical model for the selenization is developed. The behavior of the model is compared with the experimentally determined species compositions to obtain specific reaction rate constants.

Temperature dependence of H radical etching in the deposition of microcrystalline silicon alloy thin films by HG-sensitized photo-CVD

Abstract The etching of a-Si:H by H radicals in Hg-sensitized photo-CVD is studied as a function of deposition temperature, etch temperature and film hydrogen content. For films deposited at the same temperature, etch rates increased as etch temperature decreased from 230°C to 100°C and were temperature independent for temperatures between 100°C and 40°C. Etch rate increased with decreasing deposition temperature, but did not change when hydrogen content was varied by changing pressure and dilution. Under conditions producing high etch rates, microcrystalline films of Si:B:H and SiGe:H were prepared at temperatures as low as 100°C.