T. Yildirim

DETERMINATION OF TRAPPING CENTER PARAMETERS OF Tl2Ga2S3Se LAYERED CRYSTALS BY THERMALLY STIMULATED CURRENT MEASUREMENTS

We have carried out thermally stimulated current (TSC) measurements on as-grown Tl2Ga2S3Se layered single crystals in the temperature range 10–60 K with different heating rates of 0.6–1.5 K s1. The data were analyzed by curve fitting, initial rise, and peak shape methods. The results were in good agreement with each other. Experimental evidence was obtained for trapping center in Tl2Ga2S3Se crystal with activation energy of 11 meV. The capture cross section and concentration of the traps were found to be 1.5 × 10-23cm2 and 1.44 × 1010cm-3, respectively. Analysis of the TSC data at different light excitation temperatures leads to a value of 18meV/decade for the traps distribution.

Estimation of thermally stimulated current in as grown TlGaSeS layered single crystals by multilayered perceptron neural network

Research highlights? Thermally stimulated current estimation in TlGaSeS layered single crystal. ? The model is fast and more accurately and easily estimated the TSC in TlGaSeS. ? The ANN approach can be useful tool for researcher to assess the traps distribution. This paper presents an artificial neural network approach to compute thermally stimulated current (TSC) in as-grown TlGaSeS layered single crystals. The experimental data have been obtained from TSC measurements. The network has been trained by a genetic algorithm (GA). The results confirmed that the proposed model could provide an accurate computation of the TSC.