Tadao Inoue

High-speed operation of strained InGaAs/InGaAsP MQW lasers under zero-bias condition

5 High-speed zero-bias operation of 1.5- mu m In/sub 0.62/Ga/sub 0.38/As/In compressively-strained-MQW (multi-quantum-well) lasers at high temperatures is reported. This is achieved by optimizing the SCH (separate confinement heterostructure) composition to minimize the lasing delay time. Using a laser with an optimized SCH composition, zero bias 1-Gb/s modulation at 70 degrees C with a large eye opening time of 700 ps is demonstrated. In the optimization, strong carrier lifetime dependence on the SCH composition is observed. To see this dependence more precisely, the SCH structure dependence of effective carrier recombination coefficient B, which is an essential parameter for the carrier lifetime, has been experimentally investigated. >

Separate‐confinement heterostructure dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers

We experimentally investigated the separate‐confinement heterostructure (SCH) layer thickness and SCH band‐gap wavelength dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers. The dependence is explained by the carrier transport between the SCH layers and the wells.

Well Width Dependence of Threshold Current Density in Tensile-Strained InGaAs/InGaAsP Quantum-Well Lasers

We investigated how the well width affected threshold current density in tensile-strained InGaAs/InGaAsP quantum well lasers. Lasers with wider wells had lower threshold current densities, independent of the cavity length. This is mainly caused by the reduction of the transparent current density.