Tae Dong Kang

Microcrystalline silicon thin films studied using spectroscopic ellipsometry

We used spectroscopic ellipsometry to characterize four different microcrystalline silicon (μc-Si) films, which were fabricated by crystallizing a-Si:H films predeposited on glass substrates using solid phase crystallization (SPC), excimer laser annealing (ELA), Ni induced silicide-mediated crystallization (Ni-SMC), and field enhanced silicide-mediated crystallization (FESMC) method, respectively. A linear regression analysis, which took the effective dielectric function of μc-Si layer into account using effective medium approximation, showed that all these films were homogeneous throughout their thickness except the oxide overlayers, and completely crystallized regardless of the crystallization method. In our linear regression analysis, the complex dielectric function of silicon microcrystallites was represented by the Adachi model dielectric function (MDF) [T. Suzuki and S. Adachi, Jpn. J. Appl. Phys., Part1 32, 4900 (1993)], and the broadening parameters of the critical points (CPs) in MDF were allowed...

Dielectric functions and electronic band structure of lead zirconate titanate thin films

We measure pseudodielectric functions in the visible-deep ultraviolet spectral range of Pb(ZrxTi1−x)O3 (x=0.2,0.56,0.82) (PZT), Pb0.98Nb0.04(Zr0.2Ti0.8)0.96O3, Pb0.91La0.09(Zr0.65Ti0.35)0.98O3, and Pb0.85La0.15Ti0.96O3 films grown on platinized silicon substrates using a sol-gel method and on (0001) sapphire using a radio-frequency sputtering method. Using a parametric optical constant model, we estimate the dielectric functions (ϵ) of the perovskite oxide thin films. Taking the second derivative of the fitted layer dielectric functions and using the standard critical-point model, we determine the parameters of the critical points. In the second derivative spectra, the lowest band-gap energy peak near 4eV is fitted as a double peak for annealed PZTs due to the perovskite phase. As-grown PZTs have mainly pyrochlore phase and the lowest band-gap peak is fitted as a single peak. We also examine the effect of dopants La and Nb, which substitute at Pb and Zr (Ti) sites, respectively. We found three band gaps E...

Effect of Ga∕In ratio on the optical and electrical properties of GaInZnO thin films grown on SiO2∕Si substrates

Amorphous GaInZnO and polycrystalline ZnO thin films are grown by rf magnetron sputtering. Their optical properties are investigated by spectroscopic ellipsometry. The optical gap of the GaInZnO film increases with the increase of Ga content and by annealing. These are attributed to the large band-gap energy of Ga2O3 and the structural relaxation after annealing, respectively. The changes in optical properties show a strong correlation to the device characteristics of GaInZnO thin film transistors: The turn-on voltage increases as the optical gap increases with increasing Ga∕In ratio. This study shows that the GaInZnO thin films are as excellent as transparent oxide semiconductors.

Optical properties of (GeTe, Sb2Te3) pseudobinary thin films studied with spectroscopic ellipsometry

The authors measure the dielectric functions of (GeTe, Sb2Te3) pseudobinary thin films by using spectroscopic ellipsometry. By using standard critical point model, they obtained the optical transition (critical point) energies of the amorphous (crystalline) thin films. The optical (indirect band) gap energies of the amorphous (crystalline) phase are estimated from the linear extrapolation of the absorption coefficients. The band structure calculations show that GeTe, Ge2Sb2Te5, and Ge1Sb2Te4 have indirect gap whereas Ge1Sb4Te7 and Sb2Te3 have direct gap. The measured indirect band gap energies match well with electronic band structure calculations.

High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source

Single crystalline PbTiO3 films have been epitaxially grown on SrTiO3 (001) substrates by molecular beam epitaxy using H2O2 as the source of active oxygen. The optimum growth conditions have been determined by analyzing a range of growth parameters affecting growth and used to attain single phase and stoichiometric PbTiO3 thin films. In situ reflection high-energy electron diffraction pattern indicated the PbTiO3 films to be grown under a two-dimensional growth mode. The full width at half maximum of the rocking curve of a relatively thin 65nm (001) PbTiO3 film is 6.2arcmin which is indicative of high crystal quality. The band gap of PbTiO3, as determined by ellipsometric measurement, is 3.778eV.

Visible-ultraviolet spectroscopic ellipsometry of lead zirconate titanate thin films

We measured pseudodielectric functions in the visible-ultraviolet spectral range of Pb(ZrxTi1−x)O3 (x=0.2, 0.56, 0.82) (PZT) grown on platinized silicon substrate using the sol-gel method and also on (0001) sapphire using radio frequency sputtering method. Using a parametric optical constant model, we estimated the dielectric functions of the PZT thin films. Taking the second derivative of the fitted layer dielectric functions and using the standard critical point model, we determined the parameters of the critical points. In the second derivative spectra, the lowest bandgap energy peak near 4eV is fitted as a double peak for annealed PZTs associated with the perovskite phase. As-grown PZTs have mainly pyrochlore phase and the lowest bandgap is fitted as a single peak. We compared the bandgap energies with literature values.

Ellipsometric study of polymer thin films: Nonlinear optical guest-host system

We measured the pseudo-dielectric functions of several nonlinear optical (NLO) polymeric systems using spectroscopic ellipsometry in the spectral range between 0.8 and 4.7eV. We fabricated the thin films after doping the nonlinear optical active chromophores into amorphous polycarbonate to show good optical transparency. We measured the ultraviolet-visible absorption spectra of the NLO chromophores in the film state. In order to determine the dielectric functions, we employed the Bruggeman effective medium approximation, assuming a mixture of two phases: host and guest. We used the Cauchy model for the dielectric function of the host polymer and a parametric optical constant model for that of the guest chromophore. We discussed the variation of the dielectric functions and the transition energies for various host-guest systems. In the gradient donor structural chromophores, we observed a decrease of the highest occupied molecular orbital (HOMO) lowest-unoccupied-molecular-orbital (LUMO) transition energy,...

Dielectric functions and critical points of PbTiO3, PbZrO3, and PbZr0.57Ti0.43O3 grown on SrTiO3 substrate

Single crystalline PbTiO3, PbZrO3, and PbZr0.57Ti0.43O3 thin films on SrTiO3 (001) substrates were grown by a combination of molecular beam epitaxy and rf sputtering methods. The authors measured the dielectric functions of the thin films using spectroscopic ellipsometry and determined the interband critical point energies using standard critical point model. They compared the critical point energies to the band structure calculations in the literature. The data suggest that anticrossing behavior occurs between Ea and Eb near Zr=0.17. This phenomenon is attributed to a coupling between X1c and X3c bands caused by intrinsic alloy disorder.

Ellipsometric study of the poling effect on nonlinear-optical side-chain polymers containing disperse red 1

The purpose of this work is to investigate the effect of corona poling on the optical functions of the nonlinear-optical (NLO) polymers. We measured the complex refractive indices of NLO polymers deposited on glasses before and after corona poling using spectroscopic ellipsometry at room temperature at various incidence angles. In addition, we observed the absorption spectral change using ultraviolet-visible spectroscopy after corona poling, which is attributed to the chromophore orientation. In order to make NLO polymers, we attached a NLO active dye and photocrosslinkable moieties as side chains of poly(4-hydroxystyrene), deposited the polymer thin films on glass substrates by spin-coating, and corona-poled it along the surface-normal direction to align the dipoles of the chromophores along the electric field direction. In detail, PSDR1-25 designates a poly(4-hydroxystyrene) where 25% of hydroxyl groups in the side chain are substituted by disperse red 1 (DR1) and PSDR1-50 means the same except for 50% ...

Spectroscopic ellipsometry and absorption study of Zn1-xMnxO/Al2O3 (0 <= x <= 0.08) thin films

We grow Zn1−xMnxO∕Al2O3 (0⩽x⩽0.08) thin films on sapphire (0001) using radio-frequency sputtering deposition method with Ar and various N2 flow rates. We examine the effect of N2 codoping on the band gap and Mn-related midgap absorption of (Zn,Mn)O. Using spectroscopic ellipsometry, we measure pseudodielectric functions in the spectral range between 1 and 4.5eV. Using the model of Holden et al. [T. Holden et al., Phys. Rev. B 56, 4037 (1997)], we determine the uniaxial (Zn,Mn)O dielectric function and the E0 band-gap energy. The fitted band gap does not change appreciably with increasing Mn composition up to 2%. We find a very large broadening of both the E0 band gap and its exciton partner E0x peaks even for less than 2% of optically determined Mn composition. In ellipsometric spectra, we also find Mn-related 3eV optical structure. In particular, optical absorption spectra with varying N2 gas flow rate show that the Mn-related peak intensity decreases with increasing N2 flux. The decrease of the 3eV Mn-r...