Tae-hoon Kim

Deep trench terminations using ICP RIE for ideal breakdown voltages

Deep trench terminations (DTT) having no cylindrical and spherical junctions are proposed for high voltage power devices. The proposed junction terminations are implemented using ICP RIE in the edge area including scribe lane, and show near ideal breakdown voltages. The devices with deep trench terminations have higher breakdown voltages consuming much smaller junction termination area than the conventional devices with multiple field limiting rings at the same voltage and current ratings.

A novel IGBT inverter module for low-power drive applications

This paper presents a novel three-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high performance and reliable motor drive system. Several distinct design concepts were used to achieve the highly integrated functionality in a new cost-effective small package. An overall description to the SPM is given and actual application issues such as electrical characteristics, circuit configurations, thermal performance and power ratings are discussed.

Characterization of silicon direct bonding methodology for high performance IGBT

Silicon direct bonding methods for 1200 V IGBTs are introduced and their effects on the device characteristics are discussed. Device characteristics of SDB IGBTs are mainly determined by the ion implantation, oxide etching and cleaning conditions. A 1200 V punchthrough (PT) IGBT fabricated using this bonding methodology exhibits V/sub ce,sat/ of 2.5 V, E/sub off/ of 30 uJ/A and short-circuit withstanding time of 50 /spl mu/s.

Optimization of IGBT in power factor correction module for home appliance

IGBTs in an application specific power factor correction module for home air conditioner, have been characterized in terms of the conducted and radiated EMI noise as well as static and dynamic loss. Simulation and experimental results showed that internal gate resistance and drift layer thickness should be optimized in terms of performance and EMI noises. System simulation predicted that total power consumption by IGBT, FRD and rectifier does not exceed 80 W even in worst condition; output power=3 kW, controlled output DC voltage=380 V, Vin=170 V and fs=25 kHz.

The electrical characteristics of oxide due to processing condition

In order to investigate the effects of various process conditions on the electrical characteristics, we studied the electrical characteristics of the oxide thin film made under various conditions such as temperature, wafer orientation, epi. thickness and resistivity. The breakdown characteristics of oxide were estimated by the dielectric characteristics and the structure measurements for the specimens compared with those of the process temperature. Choosing the electrical characteristic and the pollution level of thin oxide as valuation items, we measured c-v plot, breakdown characteristics. In applying to the low electric field, it does not matter, but in applying to the high electric field, it became serious, if the oxide layer contains micro defects. The thickness traps and the various kinds of ions on the layer interface have a great influence on the characteristic of devices.