Tai-Hon Philip Chang

Multiple electron-beam lithography

A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry. A brief review of important examples of these approaches are given with a discussion on throughput. The current status of two specific approaches, the microcolumn and the single column with a multiple electron-beam source (photocathode), are reported. In particular, a more detailed review of the recent advances in the microcolumn technology is presented.

Experimental evaluation of arrayed microcolumn lithography

Arrays of miniature electron-beam (e-beam) columns (microcolumns) show promise for high-performance e-beam lithography in the 70 nm and below generations for both maskmaking and direct-write applications. In addition to their demonstrated high resolution, high-throughput operation is obtainable with parallel operation of microcolumns (one or more per chip) and a continuously moving stage. Proof-of-concept arrayed microcolumn operation has been demonstrated. Preliminary 1 keV lithography experiments were conducted using new, first-generation microcolumns with micromachined blankers and a raster-scan multichannel pattern generator. Complex patterns have been generated and written in PMMA with resolution <75 nm.