Taisaku Seino

Analysis of resistance change of thick‐film resistor by electric pulse loading

An analysis of the electrical conduction mechanism in a thick-film resistor is carried out by numerical calculations. In thick-film resistors, the resistance value tends to decrease when a high-voltage short-term pulse signal is applied. In order to elucidate this mechanism, a numerical model of the thick-film resistor is analyzed and is compared with the experimental results. The model used in the analysis consists of conductive particles and the conductive paths connecting the conductive particles. The resistance value of the conductive path is assumed to shift to a low-resistance state when the electric field intensity of the applied pulse signal in the conductive path exceeds the threshold value. From the results of the analysis, it is found that the above model coincides with the experimental results of the thick-film resistor on the variation of the resistance value under a high-voltage pulse signal application.