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Featured researches published by Taizo Sado.


Research reports on information science and electrical engineering of Kyushu University | 1997

Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions

Dong-Ju Bai; Akiyoshi Baba; 昭好 馬場; Atsushi Kenjo; 淳 権丈; Taizoh Sadoh; 泰造 佐道; Taizo Sado; Hiroshi Nakashima; 寛 中島; Hiroshi Mori; Toshio Tsurushima; 稔夫 鶴島; アキヨシ ババ; アツシ ケンジョウ; タイゾウ サドウ; ヒロシ ナカシマ; ヒロシ モリ; トシオ ツルシマ

Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.


Archive | 2003

Method for manufacturing strain si-soi substrate and strain si-soi substrate manufactured thereby

Katsumi Kakimoto; Hajime Konoue; Koji Matsumoto; Masanobu Miyao; Masahiko Nakamae; Masaharu Ninomiya; Taizo Sado; Ichiro Shiono; 正彦 中前; 正晴 二宮; 泰造 佐道; 勝己 垣本; 一郎 塩野; 正信 宮尾; 光二 松本; 肇 鴻上


Research reports on information science and electrical engineering of Kyushu University | 2003

Solid Phase Crystallization of a-Si in Si/Ge Multi-layer

Isao Tsunoda; 功 角田; Kei Nagatomo; 圭 長友; Atsushi Kenjo; 淳 権丈; Taizoh Sadoh; 泰造 佐道; Taizo Sado; Masanobu Miyao; 正信 宮尾


Research reports on information science and electrical engineering of Kyushu University | 2003

Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film

Isao Tsunoda; 功 角田; Taizoh Sadoh; 泰造 佐道; Taizo Sado; Masanobu Miyao; 正信 宮尾


Archive | 2003

Solid phase crystallization of a-S[lc]i in S[lc]i/G[lc]e multi-layer

Isao Tsunoda; Kei Nagatomo; Atsushi Kenjo; Taizo Sado; Masanobu Miyao; 角田 功; 長友 圭; 権丈 淳; 佐道 泰造; 宮尾 正信


Archive | 2003

歪Si−SOI基板の製造方法及び該方法により製造された歪Si−SOI基板

Katsumi Kakimoto; Hajime Konoue; Koji Matsumoto; Masanobu Miyao; Masahiko Nakamae; Masaharu Ninomiya; Taizo Sado; Ichiro Shiono; 正彦 中前; 正晴 二宮; 泰造 佐道; 勝己 垣本; 一郎 塩野; 正信 宮尾; 光二 松本; 肇 鴻上


Research reports on information science and electrical engineering of Kyushu University | 1999

Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation

Atsushi Matsushita; 篤志 松下; Yi-Qun Zhang; 依群 張; Taizoh Sadoh; 泰造 佐道; Taizo Sado; Toshio Tsurusima; 稔夫 鶴島; アツシ マツシタ; イチュン ジャン; タイゾウ サドウ; トシオ ツルシマ


Research reports on information science and electrical engineering of Kyushu University | 1999

Fabrication and Characteristics Evaluation of CoSi_2-Gate MOS Electron Tunneling Emission Cathode

Yi-Qun Zhang; 依群 張; Atsushi Kenjo; 淳 権丈; Taizoh Sadoh; 泰造 佐道; Taizo Sado; Hiroshi Nakashima; 寛 中島; Toshio Tsurushima; 稔夫 鶴島


Research reports on information science and electrical engineering of Kyushu University | 1998

Fabrication and Characterization of CoSi_2 Gate MOS Tunnel Structure

依群 張; Yi-Qun Zhang; 篤志 松下; Atsushi Matsushita; 淳 権丈; Atsushi Kenjo; 泰造 佐道; Taizo Sado; 寛 中島; Hiroshi Nakashima; 昇 手島; Noboru Teshima; Hiroshi Mori; 稔夫 鶴島; Toshio Tsurushima


Research reports on information science and electrical engineering of Kyushu University | 1997

Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions

Dong-Ju Bai; Tomohiro Kawase; Akiyoshi Baba; Atsushi Kenjo; Taizoh Sadoh; Taizo Sado; Hiroshi Nakashima; Hiroshi Mori; Toshio Tsurushima

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Hiroshi Nakashima

Brigham and Women's Hospital

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