Takahiro Kawaguchi

Spectral hole burning of Eu3+-doped Al2O3-SiO2 glass prepared by melt quenching

Abstract Persistent spectral hole burning of Eu3+ ions was investigated using a glass prepared by the melt-quenching technique. The Eu2O3-doped Al2O3–SiO2 glass was melted at 2100°C and quenched using twin-rollers. The Eu3+ ions were accommodated in two different site distributions related to rich and poor phase in Al–O polyhedra in the glass network structure, some of which were reduced into Eu2+. The persistent spectral holes were burned in the excitation spectrum of the 7 F 0 → 5 D0 transition of Eu3+ at temperatures ranging from 8 K to room temperature. The depth and width were shallower and wider than those for the glass with same composition prepared by the sol–gel method.