Takamoto Furuichi

Magnetic Tunnel Junctions With [Co/Pd]-Based Reference Layer and CoFeB Sensing Layer for Magnetic Sensor

We investigated the tunneling magnetoresistance (TMR) properties for the magnetic sensor application in MgO-based magnetic tunnel junctions (MTJs) using a perpendicularly magnetized [Co/Pd]-based reference layer and an in-plane magnetized CoFeB sensing layer with various thicknesses (tCoFeB). Linear TMR curves to an out-of-plane magnetic field were successfully obtained with a dynamic range of more than 600 Oe, corresponding to the coercivity of the [Co/Pd]-based reference layer. The MTJs showed the highest sensitivity of 0.026%/Oe for tCoFeB = 1.8 nm and the smallest nonlinearity of 0.11% full scale for tCoFeB = 3 nm. We clarified that the sensitivity and the nonlinearity in the MTJs are significantly associated with tCoFeB, which is attributed to the change in the anisotropy field of the CoFeB sensing layer.

Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

We developed CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with a perpendicularly magnetized synthetic antiferromagnetic (p-SAF) reference layer for magnetic sensor applications. The MTJs exhibited linear tunnel magnetoresistance curves to out-of-plane applied magnetic fields with dynamic ranges more than ±2.5 kOe, which are wider than those in CoFeB/MgO/CoFeB-MTJs reported to date. The performance metrics of MTJ sensors, i.e., sensitivity and nonlinearity, depend significantly on the anisotropy field of the free layer. We explained the dependences by a simple model based on the Stoner-Wohlfarth and Slonczewski models, which gives us a guideline to design the sensor performance metrics. These findings demonstrated that MTJs with a p-SAF reference layer are promising candidates for wide-dynamic-range magnetic sensors.

Magnetic-sensor performance evaluated from magneto-conductance curve in magnetic tunnel junctions using in-plane or perpendicularly magnetized synthetic antiferromagnetic reference layers

The automotive industry requires magnetic sensors exhibiting highly linear output within a dynamic range as wide as ±1 kOe. A simple model predicts that the magneto-conductance (G-H) curve in a magnetic tunnel junction (MTJ) is perfectly linear, whereas the magneto-resistance (R-H) curve inevitably contains a finite nonlinearity. We prepared two kinds of MTJs using in-plane or perpendicularly magnetized synthetic antiferromagnetic (i-SAF or p-SAF) reference layers and investigated their sensor performance. In the MTJ with the i-SAF reference layer, the G-H curve did not necessarily show smaller nonlinearities than those of the R-H curve with different dynamic ranges. This is because the magnetizations of the i-SAF reference layer start to rotate at a magnetic field even smaller than the switching field (Hsw) measured by a magnetometer, which significantly affects the tunnel magnetoresistance (TMR) effect. In the MTJ with the p-SAF reference layer, the G-H curve showed much smaller nonlinearities than those of the R-H curve, thanks to a large Hsw value of the p-SAF reference layer. We achieved a nonlinearity of 0.08% FS (full scale) in the G-H curve with a dynamic range of ±1 kOe, satisfying our target for automotive applications. This demonstrated that a reference layer exhibiting a large Hsw value is indispensable in order to achieve a highly linear G-H curve.The automotive industry requires magnetic sensors exhibiting highly linear output within a dynamic range as wide as ±1 kOe. A simple model predicts that the magneto-conductance (G-H) curve in a magnetic tunnel junction (MTJ) is perfectly linear, whereas the magneto-resistance (R-H) curve inevitably contains a finite nonlinearity. We prepared two kinds of MTJs using in-plane or perpendicularly magnetized synthetic antiferromagnetic (i-SAF or p-SAF) reference layers and investigated their sensor performance. In the MTJ with the i-SAF reference layer, the G-H curve did not necessarily show smaller nonlinearities than those of the R-H curve with different dynamic ranges. This is because the magnetizations of the i-SAF reference layer start to rotate at a magnetic field even smaller than the switching field (Hsw) measured by a magnetometer, which significantly affects the tunnel magnetoresistance (TMR) effect. In the MTJ with the p-SAF reference layer, the G-H curve showed much smaller nonlinearities than thos...

Wide-dynamic-range magnetic sensor based on magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer

Magnetic tunnel junctions (MTJs) with an MgO barrier, which exhibit a giant tunnel magnetoresistance (TMR) effect [1]–[4], have been intensively studied for application to various magnetic sensors in the automotive industry.