Takasumi Tanabe

Ultrahigh- Q photonic crystal nanocavities realized by the local width modulation of a line defect

We propose an ultrahigh quality factor (Q) photonic crystal slab nanocavity created by the local width modulation of a line defect. We show numerically that this nanocavity has an intrinsic Q value of up to 7×107. Transmission measurements for fabricated Si photonic-crystal-slab nanocavities directly coupled to input/output waveguides have exhibited a loaded Q value of ∼800000. These theoretical and experimental Q values are very high for photonic crystal nanocavities. In addition, we demonstrate that simply shifting two holes away from a line defect is sufficient to achieve an ultrahigh Q value both theoretically and experimentally.

Optical bistable switching action of Si high-Q photonic-crystal nanocavities.

We have demonstrated all-optical bistable switching operation of resonant-tunnelling devices with ultra-small high-Q Si photonic-crystal nanocavities. Due to their high Q/V ratio, the switching energy is extremely small in comparison with that of conventional devices using the same optical nonlinear mechanism. We also show that they exhibit all-opticaltransistor action by using two resonant modes. These ultrasmall unique nonlinear bistable devices have potentials to function as various signal processing functions in photonic-crystal-based optical-circuits.

All-optical switches on a silicon chip realized using photonic crystal nanocavities

We demonstrate all-optical switching in the telecommunication band, in silicon photonic crystals at high speed (∼50ps), with extremely low switching energy (a few 100fJ), and high switching contrast (∼10dB). The devices consist of ultrasmall high-quality factor nanocavities connected to input and output waveguides. Switching is induced by a nonlinear refractive-index change caused by the plasma effect of carriers generated by two-photon absorption in silicon. The high-quality factor and small mode volume led to an extraordinarily large reduction in switching energy. The estimated internal switching energy in the nanocavity is as small as a few tens of fJ, indicating that further reduction on the operating energy is possible.

Fast bistable all-optical switch and memory on a silicon photonic crystal on-chip

We demonstrate extremely low-power all-optical bistability by utilizing silicon photonic crystal nanocavities, based on the plasma effect of carriers generated by two-photon absorption. Owing to the high quality factor and the small volume of the nanocavities, the photon density inside the cavity becomes extremely high, which leads to a large reduction in operation power. Optical bistable operation in a single nanocavity permits optical read-write memory operation, which opens the possibility of an integrated optical logic circuit on a single chip, based on photonic crystals. The demonstrated bistable threshold power is 0.4 mW with a set pulse energy of 74 fJ, at a switching speed of <100 ps.

Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities

On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast switching recovery time for PhC switches. The switching window (∼70ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100fJ).

Nonlinear and adiabatic control of high-Q photonic crystal nanocavities

This article overviews our recent studies of ultrahigh-Q and ultrasmall photonic-crystal cavities, and their applications to nonlinear optical processing and novel adiabatic control of light. First, we show our latest achievements of ultrahigh-Q photonic-crystal nanocavities, and present extreme slow-light demonstration. Next, we show all-optical bistable switching and memory operations based on enhanced optical nonlinearity in these nanocavities with extremely low power, and discuss their applicability for realizing chip-scale all-optical logic, such as flip-flop. Finally, we introduce adiabatic tuning of high-Q nanocavities, which leads to novel wavelength conversion and another type of optical memories.

Ultrahigh-Q one-dimensional photonic crystal nanocavities with modulated mode-gap barriers on SiO2 claddings and on air claddings.

We report designs for a silicon-on-insulator (SOI) one-dimensional (1D) photonic crystal (PhC) nanocavity with modulated mode-gap barriers based on the lowest dielectric band. These cavities have an ultrahigh theoretical quality factor (Q) of 10(7)-10(8) while maintaining a very small modal volume of 0.6-2.0 (lambda/n)(3), which are the highest Q for any nanocavities with SiO(2) under-cladding. We have fabricated these SOI 1D-PhC cavities and confirmed that they exhibited a Q of 3.6 x 10(5), which is also the highest measured Q for SOI-type PhC nanocavities. We have also applied the same design to 1D PhC cavities with air claddings, and found that they exhibit a theoretical quality factor higher than 10(9). The fabricated air-cladding 1D Si PhC cavities have showed a quality factor of 7.2 x 10(5), which is close to the highest Q value for 1D PhC cavities.

Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (microW level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

Dynamic release of trapped light from an ultrahigh-Q nanocavity via adiabatic frequency tuning.

Adiabatic frequency shifting is demonstrated by tuning an ultrahigh-Q photonic crystal nanocavity dynamically. By resolving the output temporally and spectrally, we showed that the frequency of the light in the cavity follows the cavity resonance shift and remains in a single mode throughout the process. This confirmed unambiguously that the frequency shift results from the adiabatic tuning. We have employed this process to achieve the dynamic release of a trapped light from an ultrahigh-Q cavity and thus generate a short pulse. This approach provides a simple way of tuning Q dynamically.

All-optical flip-flop circuit composed of coupled two-port resonant tunneling filter in two-dimensional photonic crystal slab

We propose an optical flip-flop circuit composed of two-port resonant-tunneling filters based on a two-dimensional photonic crystal slab with a triangular air-hole lattice. This circuit can function as an optical digital circuit that synchronizes input data with a clock. In this report, we demonstrate that this circuit can achieve a fast operating speed with a response time of about 10 ps and a low operating power of 60 mW by employing a two-dimensional FDTD calculation.