Takeru Kizu

Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-smooth step-terrace structure was used to improve the crystallinity and morphology of the produced ZnTe film. The growth mode of the ZnTe thin film on a sapphire substrate with an atomically-smooth step-terrace structure was found to shift to a two-dimensional growth mode, and a ZnTe thin film possessing a flat surface was obtained. The crystallographic properties of the ZnTe film suggested that the resulting layer consisted of a single (111)-oriented domain. The photoluminescence property was also improved, and the interface lattice alignment between the ZnTe and sapphire was also affected by the atomically-smooth step-terrace structure.

Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

Zinc telluride (ZnTe) epilayers were grown on S-plane (

The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

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Influence of the lattice mismatch strain on the surface morphology of ZnMgTe/ZnTe/ZnMgTe electro-optical waveguide structure

101¯1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (

Mesa etching of ZnTe using a HF based etchant

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Effect of the chemical cleaning of sapphire substrates on the domain structure of ZnTe thin films

101¯0) substrates, and r-plane (