Takeshi Oi

Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs

For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We have successfully completed the operation of the SiC inverter module at continuous rating of up to 11kW with carrier frequency of 20 kHz. The power loss during the operation was measured by calorimetric method and the results showed that the loss was considerably reduced by 30% of a similar rating commercialized IGBT power module at carrier frequency of 15 kHz.

High Power-Density SiC Converter

A compact SiC converter having power densities about 9 W/cm3 is designed and fabricated. It is confirmed that the converter operates in a thermally permissive range. The power loss of the module of the converter measured under motor operations is less than 50% of the similar-rating Si module loss. The shrink of the effective volume of DC-link capacitor is necessary to achieve the high power-density SiC converter, in addition to the decrease of the cooling system volume due to the loss reduction caused by SiC devices.