Takumi Uesugi

A performance study of next generation's TMR heads beyond 200 gb/in/sup 2/

Practical level performance for /spl sim/200 Gb/in/sup 2/ has been verified by AlOx barrier tunneling magnetoresistive (TMR) heads, which resistance area product (RA) is more than 3 ohm/spl middot//spl mu/m/sup 2/, in perpendicular recording mode. In addition, improved AlOx barrier magnetic tunnel junctions (MTJs) formed on plated bottom shield with smoothed surface achieved TMR ratio of 25% and 16% with RA of 1.9 and 1.0 ohm/spl middot//spl mu/m/sup 2/, respectively, indicating over 200 Gb/in/sup 2/ is also possible by the AlOx barrier TMR heads with lower RA. Furthermore, TMR heads with crystalline MgO barrier were fabricated. The MgO barrier MTJs formed on plated bottom shield with smoothed surface achieved TMR ratio of 88% with RA of 2.0 ohm/spl middot//spl mu/m/sup 2/, which is 3.5 times higher than that of AlOx barrier MTJs under similar RA. Dynamic electrical test was also performed for TMR heads with the MgO barrier. As a result, good readback waveform with huge output was obtained. This is the first confirmation of readback waveform generated from TMR heads with crystalline MgO barrier. Our results indicate that the future of TMR heads technology is promising beyond 200 Gb/in/sup 2/ application.

Electrical performance and reliability of tunnel magnetoresistance heads for 100-Gb/in/sup 2/ application

Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. A low resistance and high delta R/R tunneling junction film has been developed and used for this study. The resistance area product and delta R/R are 3 /spl Omega//spl middot//spl mu/m/sup 2/ and 18%, respectively. Reliability that includes lifetime was also studied. We have found TuMR heads can be a promising candidate for 100 Gb/in/sup 2/ application.

RuRhMn and PtMn specular spin valve with magnetic oxide layer

In this paper, RuRhMn-based and PtMn-based spin valves with magnetic oxide layer (MOL) inserted in the free layer, pinned layer, or both layers were studied. Both magnetoresistance (MR) ratio and /spl Delta/R/sub sq/ were increased in these spin valves, due to the insertion of MOL. Theoretical calculation based on semi-classical Boltzmann equation for transport indicated that the enhancement of MR ratio can be attributed to the strong specular scattering at interface with MOL. PtMn specular spin valves are more thermally stable than RuRhMn spin valves. Their thermal stability can be further improved by using a synthetic pinned layer with MOL, where the effective exchange field degrades less than 20% when the temperature is increased up to 350/spl deg/C.

Low-frequency noise analysis of TMR heads

1/f noise as time traces of the fluctuation and low-frequency noise (pulse noise) were observed in TMR heads. These were then related to the quality of the oxide layer in the TMR heads.