Takuya Katsuragawa

Generation of electromagnetic waves from 0.3 to 1.6 terahertz with a high- Tc superconducting Bi2Sr2CaCu2O8+δ intrinsic Josephson junction emitter

To obtain higher power P and frequency f emissions from the intrinsic Josephson junctions in a high-Tc superconducting Bi2Sr2CaCu2O8+δ single crystal, we embedded a rectangular stand-alone mesa of that material in a sandwich structure to allow for efficient heat exhaust. By varying the current-voltage (I-V) bias conditions and the bath temperature Tb, f is tunable from 0.3 to 1.6 THz. The maximum P of a few tens of μW, an order of magnitude greater than from previous devices, was found at Tb∼55 K on an inner I-V branch at the TM(1,0) cavity resonance mode frequency. The highest f of 1.6 THz was found at Tb=10 K on an inner I–V branch, but away from cavity resonance frequencies. A possible explanation is presented.

A high-Tc intrinsic Josephson junction emitter tunable from 0.5 to 2.4 terahertz

Strong, monochromatic, coherent and continuous terahertz (THz) radiation was generated from the intrinsic Josephson junctions in a cylindrical stand-alone mesa sandwich structure fabricated from a single crystal of the high-temperature superconductor Bi2Sr2CaCu2 O8+δ. By varying the base temperature and the dc bias current-voltage characteristic (IVC) points, the emission frequency is tunable from 0.5 to a record high 2.4 THz observed on two inner IVC branch points. Strong emission power peaks were observed at 1.0 THz and 1.6 THz. This device is hence an excellent candidate to fill the “THz gap” between ∼1.4 and 2.0 THz.

Electrical potential distribution in terahertz-emitting rectangular mesa devices of high- T c superconducting Bi2Sr2CaCu2O

Excessive Joule heating of conventional rectangular mesa devices of the high-transition-temperature superconductor Bi2Sr2CaCu2O leads to hot spots, in which the local temperature . Similar devices without hot spots are known to obey the ac-Josephson relation, emitting sub-terahertz (THz) waves at frequencies , where V is the applied dc voltage or electrostatic potential and N is the number of active junctions in the device. However, it often has been difficult to predict the emission f from the applied V for two reasons: N is generally unknown and therefore has been assumed to be a fitting parameter, and especially when hot spots are present, V could develop a spatial dependence that cannot be accurately determined using two-terminal measurements. To clarify the situation, simultaneous SiC microcrystalline photoluminescence measurements of , Fourier-transform infrared (FTIR) measurements of f, and both two and four-terminal measurements of the local were performed. The present four-probe measurements provide strong evidence that when a constant V is measured within the devices superconducting region outside of the hot spot, the only requirement for the accuracy of the ac-Josephson relation is the ubiquitous adjustment of the fitting parameter N. The four-probe measurements demonstrate that the electric potential distribution is strongly non-uniform near to the hot spot, but is essentially uniform sufficiently far from it. As expected, the emission frequency follows the ac-Josephson relation correctly even for low bath temperatures at which the system jumps to inner IV characteristic branches with smaller N values, reconfirming the ac-Josephson effect as the primary mechanism for the sub-THz emission.