Tan Ji

Jia Yan; Chen Hong; Tan Ji; Lu Shuojin; Zhu Yangjun

A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching loss. Although the turn-off switching loss decreases as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar, which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Therefore, the proposed SemiSJ-CSTBT offers considerably better robustness compared to the conventional CSTBT and SJ-CSTBT. The simulation results show that the SemiSJ-CSTBT exhibits an increase in breakdown voltage by 160 V (13%) and a reduction of turn-off switching loss by approximately 15%.

Tan Ji; Zhu Yangjun; Lu Shuojin; Tian Xiaoli; Teng Yuan; Yang Fei; Zhang Guangyin; Shen Qianxing

Zhang Guangyin; Tan Ji; Lu Shuojin; Zhu Yangjun

Yang Fei; Zhang Guangyin; Tan Ji; Shen Qianhang; Zhu Yangjun; Lu Shuojin; Tian Xiaoli

Yang Fei; Zhang Guangyin; Tan Ji; Shen Qianhang; Zhu Yangjun; Lu Shuojin; Tian Xiaoli

Zhang Guangyin; Yang Fei; Zhu Yangjun; Lu Shuojin; Tan Ji

Yang Fei; Zhang Guangyin; Tan Ji; Shen Qianxing; Zhu Yangjun; Lu Shuojin; Tian Xiaoli

Yang Fei; Tan Ji; Zhang Guangyin; Shen Qianxing; Zhu Yangjun; Lu Shuojin; Tian Xiaoli

Jia Yan; Chen Hong; Tan Ji; Lu Shuojin; Zhu Yangjun

Shen Qianxing; Zhang Xukun; Zhang Guangyin; Yang Fei; Tan Ji; Tian Xiaoli; Lu Shuojin; Zhu Yangjun