Tanejiro Ikeda

Sputtering ion source with simultaneous use of microwave and Penning‐ionization‐gauge discharge

Characteristics of Penning‐ionization‐gauge‐type compact microwave metal‐ion source are described. This ion source can operate with two different discharge modes: the positive‐resistance region mode and the negative‐resistance region mode. In the positive‐resistance region, a normalized emittance of a Ta+‐ion beam is 1.8×10−7 m rad, the plasma density is 4×1012 cm−3, and the electron temperature is about 6 eV. In the negative‐resistance region, the emittance is 2.7×10−7 m rad. This ion source is suitable for operation in the positive‐resistance region where the microwave discharge is dominant.

Low-energy double ion-beam deposition of compound films

Abstract An ion-beam deposition system has been developed for the synthesis of refractory-metal compound films. The system has two beam lines for a metal and a gas ion. It is possible to decrease the ion energies to deposition energies in the range from a few tens to a few hundred electron volts, and to make the two-way (43°) ion beams overlap on the substrate. By simultaneously irradiating with a mass-separated refractory-metal (Ta, W or Mo) ion beam and a reactive-gas (oxygen or nitrogen) ion beam of 60–200 eV, TaO x , WO x , MoO x or TaN x films on a Si substrate were obtained at room temperature. Moreover, purity and stoichiometry of the deposited film depend on the deposition energy.