Tang Huili

Spectroscopic properties of Er/Ce-codoped La3Ga5SiO14

The Er-single-doped and Er/Ce-codoped La3Ga5SiO14 polycrystalline powders are synthesized by the solid-phase synthesis method. The room-temperature luminescence spectra of the samples are investigated. The Near-infrared-region spectroscopic properties of Er3+ ions in the La3Ga5SiO14 systems are analysed with Judd-Ofelt theory and rate equations. The effective deactivating effect of Ce3+ ions on Er3+ ions is confirmed.

Growth and spectroscopic characteristics of Nd-doped PbWO4 crystal

Nd-doped PbWO4 crystals are grown by using the modified Bridgman method. The spectroscopic properties of the crystals are investigated. The changes of the absorption band at 350 nm are discussed for samples annealed at 740 °C and 1040 °C. The radiative lifetime of the 4F3/2 level is calculated by using the Judd-Ofelt theory according to the absorption spectrum of 0.5 at.% Nd-doped PbWO4 crystal. The spontaneous Raman scattering properties of the crystals are analysed.

In:Ga 2 O 3 氧化物半导体晶体的生长与性能研究

β-Ga 2 O 3 晶体是一种新型宽禁带氧化物半导体材料, 本征导电性差。为了在调控导电性能的同时兼顾高的透过率和结晶性能, 离子掺杂是一种有效的途径。采用光学浮区法生长出Φ8 mm×50 mm蓝色透明In:Ga 2 O 3 晶体, 晶体具有较高的结晶完整性。In3+离子掺杂后, β-Ga 2 O 3 晶体在红外波段出现明显的自由载流子吸收, 热导率稍有减小。室温下, In:Ga 2 O 3 晶体的电导率和载流子浓度分别为4.94×10 -4 S/cm和1.005×10 16 cm -3 , 其值高于β-Ga 2 O 3 晶体约1个数量级。In:Ga 2 O 3 晶体电学性能对热处理敏感, 1200℃空气气氛和氩气气氛退火后电导率降低。结果表明, In 3+ 离子掺杂能够调控β-Ga 2 O 3 晶体的导电性能。

Growth and Property of In:Ga

β-Ga 2 O 3 晶体是一种新型宽禁带氧化物半导体材料, 本征导电性差。为了在调控导电性能的同时兼顾高的透过率和结晶性能, 离子掺杂是一种有效的途径。采用光学浮区法生长出Φ8 mm×50 mm蓝色透明In:Ga 2 O 3 晶体, 晶体具有较高的结晶完整性。In3+离子掺杂后, β-Ga 2 O 3 晶体在红外波段出现明显的自由载流子吸收, 热导率稍有减小。室温下, In:Ga 2 O 3 晶体的电导率和载流子浓度分别为4.94×10 -4 S/cm和1.005×10 16 cm -3 , 其值高于β-Ga 2 O 3 晶体约1个数量级。In:Ga 2 O 3 晶体电学性能对热处理敏感, 1200℃空气气氛和氩气气氛退火后电导率降低。结果表明, In 3+ 离子掺杂能够调控β-Ga 2 O 3 晶体的导电性能。