Tania R. Giraldi

Photoluminescence in quantum-confined SnO2 nanocrystals: Evidence of free exciton decay

Nanocrystalline SnO2 quantum dots were synthesized at room temperature by hydrolysis reaction of SnCl2. The addition of tetrabutyl ammonium hydroxide and the use of hydrothermal treatment enabled one to obtain tin dioxide colloidal suspensions with mean particle radii ranging from 1.5 to 4.3 nm. The photoluminescent properties of the suspensions were studied. The particle size distribution was estimated by transmission electron microscopy. Assuming that the maximum intensity photon energy of the photoluminescence spectra is related to the band gap energy of the system, the size dependence of the band gap energies of the quantum-confined SnO2 particles was studied. This dependence was observed to agree very well with the weak confinement regime predicted by the effective mass model. This might be an indication that photoluminescence occurs as a result of a free exciton decay process.

Crystal growth in colloidal tin oxide nanocrystals induced by coalescence at room temperature

The crystal growth process in colloidal nanocrystal systems is usually associated with the Ostwald-ripening mechanism. Here, we report on experimental evidence indicating that another crystal growth process took place in a colloidal nanocrystal system at room temperature. This crystal growth process is based on grain rotation among neighboring grains, resulting in a coherent grain–grain interface, which, by eliminating common boundaries, causes neighboring grains to coalesce, thereby forming a single larger nanocrystal. This phenomenon was observed in SnO2 nanocrystals (particle size ranging from 10 to 30 A).

Electrical characterization of SnO2:Sb ultrathin films obtained by controlled thickness deposition

A representative study is reported on the electrical properties of SnO2:Sb ultrathin films (thickness of 40–70 nm) produced by a deposition method based on aqueous colloidal suspensions of 3–5 nm crystalline oxides. The results revealed the films’ electrical behavior in a range of 10–300 K, showing a strong dependence on dopant incorporation, with minimum resistivity values in 10 mol % of Sb content. All the samples displayed semiconductor behavior, but the transport mechanism showed a strong dependence on thickness, making it difficult to fit it to well-known models. In thicker films, the mechanism proved to be an intermediary system, with thermally activated and hopping features. Electron hopping was estimated in the range of 0.4–1.9 nm, i.e., in the same order as the particle size.

Obtenção de filmes finos de TiO2 nanoestruturado pelo método dos precursores poliméricos

This work focuses in optimizing setup for obtaining TiO2 thin films by polymeric precursor route due to its advantages on stoichiometric and morphological control. Precursor stoichiometry, synthesis pH, solids concentration and rotation speed at deposition were optimized evaluating thin films morphology and thickness. Thermogravimetry and RMN were applied for precursors characterization and AFM, XRD and ellipsometry for thin films evaluation. Results showed successful attainment of homogeneous nanocrystalline anatase TiO2 thin films with outstanding control over morphological characteristics, mean grain size of 17 nm, packing densities between 57 and 75%, estimated surface areas of 90 m2/g and monolayers thickness within 20 and 128 nm.