Tatsuro Miyasato

Comparison of the CKLL first-derivative Auger spectra from XPS and AES using diamond, graphite, SiC and diamond-like-carbon films

Abstract The carbon KLL first-derivative Auger spectra obtained by numerically differentiating the XPS N(E) line gives a better fine-structure fingerprint of the carbon state than conventional AES. The first-derivative of the X-ray excited (XAES) CKLL spectrum from a diamond-like-carbon (DLC) film exhibited almost the same spectrum as both the XAES and AES spectra from natural diamond. However, the AES spectrum of the DLC film indicated a graphite-like structure due to electron beam damage. Comparison of the XAES and AES spectra suggested that the electron beam used in conventional AES partially changed the plasmon loss structure of carbon in diamond, graphite and β-SiC as well.

Tetrahedral carbon film by hydrogen gas reactive rf-sputtering of graphite onto low temperature substrate

Abstract Hydrogenated amorphous carbon film with high ratio (more than 80 %) of sp 3 (single C-C) bond was for the first time deposited by means of hydrogen gas reactive rf-sputtering method from a graphite target onto low temperature (room temperature ∼ 150 °C) substrate. The optical gap was 1.4 ∼ 2.8 eV, which increased with the contents of hydrogen atoms in the film. The resistivity was ∼10 12 Ωcm. The content of hydrogen in the film was 0.8 ∼ 1.0 by H/C ratio which decreased with increasing rf-power or decreasing gas pressure. Microcrystalline diamond could be observed by TEM and electron diffraction pattern in the annealed film at 1000 °C in vacuum.

Effect of Electrical Conductivity of Substrate on RF-Sputter-Deposition of µc-Si:H at -180°C

The µc-Si:H was fabricated by the reactive RF-sputtering technique onto low temperature substrate (-180°C). It has been found that the electrical conductivity of the substrate plays a significant role in the fabrication of µc-Si:H, i.e., the –SiH3 rich µc-Si:H is produced on the insulating substrate but the –SiH2– rich one on the conductive substrate. The substantial effect of the electrical conductivity of the substrate is assumed to be that the screening potential by the accumulated electric charge on the insulating substrate reduced the kinetic energy of ions which impinge onto the substrate.

Low temperature process for preparing a diamond-like-carbon film from graphite by H2-gas chemical sputtering

Abstract By means of hydrogen gas chemical sputtering of a graphite target, we have succeeded in the preparation of high insulating diamond-like-carbon (an a-C: H) film by RF- and DC-power. A noteworthy point is that the film can be prepared quite easily by a low temperature (room temperature ∼ 150°C) process. The film contains about 0.8 H/C of hydrogen atoms, and it is estimated that 80 or 90% of the bonding between neighbouring carbon atoms (except the C-H bond) is by a sp3 hybridization bond. The energy gap is from 1.2 to 3.0 eV, which increases with the content of hydrogen atoms as a general tendency. The resistivity is about 1012 Ω cm, and the density of the dangling bond is estimated to be of the order of 10 17 cm 3 . Diamond grains of about a few hundred A in diameter appeared in the film annealed at 1000°C in vacuum.

Magnetic Field Dependence of Ballistic Heat-Pulse Attenuation in Sb Doped Ge

The magnetic field and the frequency dependence of the attenuation of the ballistic heat-pulse propagating in Sb (0.4–0.9x1015/cm3) doped Ge were measured at liquid He temperatures up to 60 kG. We used the CdS thin film bolometer which is useful in the magnetic field. The heat-pulse was propagated along the [111] or [100] axis, and the magnetic field \( \overset{\lower0.5em\hbox{

Coating film and method and apparatus for producing the same

\smash{\scriptscriptstyle\rightharpoonup}

Process of depositing diamond-like thin film by cathode sputtering

}} {H} \) was applied along the direction of the wave vector \( \overset{\lower0.5em\hbox{

DIAMOND-LIKE THIN FILM AND METHOD FOR MAKING THE SAME

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ESCA compositional profiles and electrical properties of diamond-like carbon film/Si MIS structure

}} {q} \). In the former case \(\left( {\left[ {111} \right]////} \right)\), the Zeeman splitting of the ground states of the neutral donor electrons reflects directly on the attenuation. In the latter case \(\left( {\left[ {100} \right]////} \right)\), the magnetic field dependence of the attenuation mainly arises from the shrinkage effect of the donor wave function.