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Tatsuya E. Sato

Applied Materials

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Archive | 1990

Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer

Peter Wai-Man Lee; David Nin-Kou Wang; Makoto Nagashima; Kazuto Fukuma; Tatsuya E. Sato

Archive | 1995

Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus

Martin Jay Seamons; Cary Ching; Kou Imaoka; Tatsuya E. Sato; Tirunelveli S. Ravi; Michael C. Triplett

Archive | 1996

Deposition of silicon nitrides by plasma-enhanced chemical vapor deposition

Tatsuya E. Sato; Atsushi Tabata; Naoaki Kobayashi

Archive | 2007

Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system

Thai Cheng Chua; Steven Hung; Patricia M. Liu; Tatsuya E. Sato; Alex Paterson; Valentin N. Todorov; John Holland

Archive | 2006

Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus

Thai Cheng Chua; Alex Paterson; Steven Hung; Patricia M. Liu; Tatsuya E. Sato; Valentin N. Todorow; John Holland

Archive | 1995

Deposition of silicon nitride by plasma-enchanced chemical vapor deposition

Tatsuya E. Sato; Atsushi Tabata; Naoaki Kobayashi

Archive | 2006

Methods and apparatus for incorporating nitrogen in oxide films

Tatsuya E. Sato; Patricia M. Liu; Fanos Christodoulou

Archive | 1991

Two step process for forming an oxide layer over a stepped surface of a semiconductor wafer

Lee Peter Wai-Man; Wang David Nin-Kou; Makoto Nagashima; Kazuto Fukuma; Tatsuya E. Sato

Archive | 2011

Methods for manufacturing high dielectric constant films

Tatsuya E. Sato; Maitreyee Mahajani

Archive | 2012

In-Situ Hydroxylation System

Kenric Choi; Tatsuya E. Sato; Ernesto Ulloa

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