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Dive into the research topics where Tatsuya Koito is active.

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Featured researches published by Tatsuya Koito.


international symposium on semiconductor manufacturing | 1998

A novel treatment technique for DMSO wastewater

Tatsuya Koito; Masafumi Tekawa; Arata Toyoda

We have developed an efficient treatment technique for wastewater containing dimethyl sulfoxide [DMSO, (CH/sub 3/)/sub 2/SO], a compound used as a photoresist stripping solvent in semiconductor manufacturing processes. Generally, wastewater containing organic compounds can be treated biologically, but with DMSO wastewater, biological treatment is not available because noxious compounds are produced that harm the environment. Here, we present an effective DMSO wastewater treatment technique in which we add an oxidizing agent and irradiate the wastewater with ultraviolet light to prevent damage to the environment. The use of hydrogen peroxide (H/sub 2/O/sub 2/) as an oxidizing agent in combination with ultraviolet irradiation causes DMSO to decompose promptly into methanesulfonic acid (MSA, CH/sub 3/SO/sub 2/OH). With continued treatment, the resultant MSA decomposes gradually into the inorganic compound sulfuric acid (H/sub 2/SO/sub 4/). In this reactive route, no noxious compounds are generated. We confirmed that MSA can be biologically treated comparatively easily, and that by combining the initial ultraviolet irradiation/H/sub 2/O/sub 2/ addition treatment to rapidly produce MSA with a biological treatment to convert the MSA to H/sub 2/SO/sub 4/, the total processing can be treated at very low cost. These treatment techniques make use of the characteristically high reactivity of DMSO and are very effective as a means of treating DMSO wastewater.


international symposium on semiconductor manufacturing | 2002

Effective and environmentally friendly remover for photo resist and ashing residue for use in Cu/low-k process

Tatsuya Koito; Keiji Hirano; Kenichi Nakabeppu

The authors have developed an effective removal solvent for photo resist and its ashing residue for use in copper wire/low-dielectric interlayer devices that significantly lowers the risk of harming the environment. The inhibition of Cu corrosion is very important in these devices, and benzotriazole (BTA, C/sub 6/H/sub 5/N/sub 3/) is usually used as the corrosion inhibitor. However, BTA creates mutagenicity and biodegrades poorly. The authors investigate several typical heterocyclic nitrogen compounds as Cu inhibitors to replace BTA and study their optimum compositions. It has been found that uric acid (C/sub 5/H/sub 4/N/sub 4/O/sub 3/) is the best corrosion inhibitor for Cu. Moreover, this remover, which was composed mainly of amino alcohol, uric acid, and H/sub 2/O, can be applied to low-k films by optimizing its H/sub 2/O ratio. It not only effectively removed the ashing residue on Cu/low-k devices but also effectively reduced the environmental impact because the rinse wastewater containing remover can be completely treated at the fabrication site with ordinary biological processes.


international symposium on semiconductor manufacturing | 2001

An environmentally friendly photoresist and ashing residue remover for Cu/low-k devices

Tatsuya Koito; Keiji Hirano; Kenichi Nakabeppu

Developed an effective removal solvent for photoresist and its ashing residue for use in copper wire/low-dielectric interlayer devices that significantly lowers the risk of harming the environment. The inhibition of Cu corrosion is very important in these devices, and benzotriazole (BTA, C/sub 6/H/sub 5/N/sub 3/) is usually used as the corrosion inhibitor. However, BTA creates mutagenicity and biodegrades poorly. We investigated several typical heterocyclic nitrogen compounds such as Cu inhibitor to replace BTA and studied their optimum compositions. We found that uric acid (C/sub 5/N/sub 4/O/sub 3/) was the best corrosion inhibitor for Cu. Moreover, this remover which is composed mainly of amino alcohol, uric acid, and H/sub 2/O can be applied to low-k films by optimizing its H/sub 2/O ratio. It not only effectively removes the ashing residue on Cu/low-k devices, but also effectively reduces the environmental impact because the rinse wastewater containing remover can be completely treated at the fabrication site with ordinary biological processes.


international symposium on semiconductor manufacturing | 1999

Ozone treatment of persistent organic chemical wastewater

J. Tanaka; Keiji Hirano; Arata Toyoda; T. Taira; Tatsuya Koito; M. Hidaka

We developed an ozone treatment process for wastewater containing persistent organic chemicals that are not easily treated by conventional processes. These include alkylbenzenesulfonic acids (ABS), phenol, and dimethylsulfoxide (DMSO). We confirmed that there are different optimal pH conditions with respect to the efficiency of ozone treatment for different types of organic compounds. The potential of the process was convincingly demonstrated; with proper pH adjustment it is extremely effective. Organic compounds, for which biological treatment is not suitable, can be converted to biologically degradable compounds without generating hazardous byproducts. Ozone treatment can be extremely cost-effective, particularly, for high-level wastewater.


Archive | 2001

Stripper composition and stripping method

Hidemitsu Aoki; Kenichi Nakabeppu; Tatsuya Koito


Archive | 2003

Cleaning liquid and method for producing semiconductor device

Yoshiko Kasama; Tatsuya Koito; Akinobu Nakamura; 彰信 中村; 達也 小糸; 佳子 笠間


Archive | 2002

DETERGENT SOLUTION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Keiji Hirano; Tatsuya Koito; Akinobu Nakamura; 彰信 中村; 達也 小糸; 啓二 平野


Archive | 2000

Remover composition and removing method

Hidemitsu Aoki; Tatsuya Koito; Kenichi Nakabeppu; 健一 中別府; 達也 小糸; 秀充 青木


Archive | 2001

Parting agent composition and parting method

Hidemitsu Aoki; Keiji Hirano; Tatsuya Koito; Hiroaki Tomimori; 浩昭 富盛; 達也 小糸; 啓二 平野; 秀充 青木


Archive | 2003

Preparation process for semiconductor device

Hidemitsu Aoki; Kenichi Tokioka; Yoshiko Kasama; Tatsuya Koito; Keiji Hirano

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