Tatyana Purtova

A 60 to 77 GHz Switchable LNA in an RF-MEMS Embedded BiCMOS Technology

In this letter, a 60 to 77 GHz switchable low-noise amplifier is presented. The IC is realized in a radio frequency microelectromechanical systems embedded 0.25 μm SiGe-C BiCMOS technology. Measured results show that the presented IC achieves good performance in both frequency bands in terms of gain, noise figure and power consumption. These results demonstrate the successful monolithic integration of RF-MEMS switches with active devices, and a first time implementation of a reconfigurable low noise amplifier at such high frequencies.

Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads

This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20 dB are achieved from 30 to 100 GHz. A glass cap with a silicon frame is used to package the switch. Single-pole-double-throw (SPDT) switches and a 24 – 77 GHz reconfigurable LNA is also demonstrated as a first time implementation of single chip BiCMOS reconfigurable circuit at such high frequencies.

A Four-Port SiGe BiCMOS Duplexer for Ka-Band SatCom on the Move User Terminals

This letter reports the design and measurements of a SiGe BiCMOS duplexer developed for T/R (transmit/receive) Ka-band SatCom on-the-move user terminals. The IC presented in this work is designed for the integration in a hexa-core chip for dual-band phased array applications. Due to the particular configuration of the chip, the duplexer has four ports: one common port, one input port for the R channel and two output ports for the T channels. The chip size is 570 × 400 μm 2 including the measurements pads. Simulated and measured results demonstrate that the proposed device achieves good performance in both frequency bands in terms of input matching, transmission losses and isolation.

A planar, scalable active transceiver array for mobile Satcom applications

A novel concept of scalable planar transceiver arrays for Satcom on the move applications is presented with emphasis on the highly integrated combination of antennas and an innovative SiGe BiCMOS technology enhanced by the monolithic integration of RF-MEMS switches.

0.25µm BiCMOS system-on-chip with four transceivers for Ka-band active reflectarrays

A highly complex mm-wave system-on-chip (SOC) for Ka-band active antenna arrays is presented, containing digital and mixed-signal circuits, RF-MEMS switches and four transceivers. In RX mode, 13.7dB of maximum gain with -21dBm IP1dB were obtained, in TX mode, 11dB of maximum gain with -2dBm OP1dB. A total of 65536 amplitude and phase states can be set. The IC has a total power consumption of 222mW in RX and 337mW in TX mode and occupies 4×3.85mm2.

79 GHz Fully Integrated Fully Differential Si/SiGe HBT Amplifier for Automotive Radar Applications

In this work, the authors present a fully integrated, fully differential amplifier operating at 79 GHz using a highspeed Si/SiGe hetero-bipolar technology. This amplifier needs a single supply voltage and shows high performance such as high gain, excellent reverse isolation and low power consumption (90 mW at 3 V supply voltage). This result was achieved by using multi-stage cascode topology and a thin-film microstrip line based design. In addition, the frequency of operation can be easily adjusted within a wide range by changing the length of the matching network (by using focused ion beam or ultrasonic manipulator). A simple but efficient layout technique was used to easily measure single-endedly the differential integrated circuit, also at these high frequencies.

A co-designed Band 1-Band 3 carrier aggregation power amplifier quadplexer in GaAs-HBT and BAW technologies

Carrier aggregation (CA) is considered to be the key-enabler for LTE-Advanced (LTE-A) allowing data rates up to the Gbit/s range. Besides advanced semiconductor and acoustic technologies, CA requires tailored circuits. This paper presents co-design of a Bulk Acoustic Wave (BAW) CA quadplexer (QPX), a GaAs power amplifier (PA) and the necessary matching in between them for obtaining optimum RF front-end module performance for CA needs. One of the most challenging CA cases is covered: Band 1-Band 3. We will discuss antenna matching, isolation in all involved bands and transmit (Tx) matching for high output power and efficiency. Module measurements show state-of-the-art performance. Furthermore, measurements and simulations are in excellent agreement from DC up to 8 GHz with a dynamic range of 90 dB.

0.25-

The first millimeter-wave system-on-chip for dual-band phased array applications is presented as a proof of concept for K-/Ka-band (20/30 GHz) satellite communication on-the-move applications. Each chip includes four transmit (Tx) and two receive (Rx) channels working at Ka- and K-band, respectively. The proposed architecture enables a half-duplex operating mode in two different bands. Its development was driven taking into account the integration into a realistic Tx/Rx shared aperture phased array architecture. Full amplitude and phase control are provided for each channel with high granularity (65 536 states). The measured results demonstrate the validity of the proposed chip architecture, even though the channel output power and the noise figure (NF) are not in full agreement with the simulations. In Tx mode, the channel provides 9.47 dB of gain with 4.19-dBm output power at 1-dB compression. In Rx mode, the channel gain is 21.6 dB with an NF of 5 dB. In a scenario with 5.265° phase steps and 8-dB amplitude tapering capability, the amplitude and phase root-mean-square (RMS) errors within the Tx bandwidth (29.5–30.8 GHz) are equal to 0.52 dB and 3.74°, respectively. The amplitude and phase RMS errors in the Rx bandwidth (19.7–21 GHz) are equal to 2.05 dB and 12.11°, respectively. The chip consumes 340 mW in Tx and 242 mW in Rx mode and occupies

\mu \text{m}

3.3 \times 3.5

BiCMOS System-on-Chip for K-/Ka-Band Satellite Communication Transmit–Receive Active Phased Arrays

mm2.