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Dive into the research topics where Terunobu Ishikawa is active.

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Featured researches published by Terunobu Ishikawa.


Japanese Journal of Applied Physics | 2007

Effects of Ba/Ti Ratio on Positive Temperature Coefficient of Resistivity Characteristics of Donor-doped BaTiO3 Fired in Reducing Atmosphere

Hideaki Niimi; Terunobu Ishikawa; Kenjiro Mihara; Yukio Sakabe; Makoto Kuwabara

The positive temperature coefficient (PTC) of resistivity characteristics of donor-doped BaTiO3 fired at 1350 °C in a reducing atmosphere of 1×10-7 MPa at the partial pressure of oxygen is investigated. The result reveals that BaTiO3 ceramics fired in such a reducing atmosphere usually exhibit low PTC characteristics, whereas La-doped BaTiO3 with compositions in the range of (Ba+La)/Ti1.02 exhibit pronounced PTC characteristics. A La content of less than 0.4 mol % is suitable for the PTC characteristics, while samples doped with more than 0.8 mol % La do not show the PTC characteristics. The PTC characteristics of semiconducting BaTiO3 fired in a reducing atmosphere are enhanced with a decrease in the ion radius of a donor ion in the order La<Nd<Sm, therefore, semiconducting BaTiO3 doped with Sm shows pronounced PTC characteristics with a resistivity increase of more than 6 orders of magnitude. However, the resistivity of BaTiO3 ceramics doped with Y, whose ion radius is less than that of Sm, is extremely high resistivity that decreases with increasing temperature, thereby indicating only a negative temperature coefficient (NTC) characteristics.


Archive | 1998

Semiconductive ceramic and semiconductive ceramic element using the same

Yoichi Kawase; Akinori Nakayama; Satoshi Ueno; Terunobu Ishikawa; Hideaki Niimi


Archive | 1997

Semiconducting ceramic compounds having negative resistance-temperature characteristics with critical temperatures

Terunobu Ishikawa; Akinori Nakayama; Hiroshi Takagi


Archive | 1993

NTC thermistor composition based on barium titanate

Terunobu Ishikawa; Hideaki Niimi; Yasunobu Yoneda


Archive | 1999

Lanthanum cobalt oxide semiconductor ceramic and related devices

Satoshi Ueno; Akinori Nakayama; Terunobu Ishikawa; Hideaki Niimi; Yoichi Kawase


Archive | 1996

Semiconductor ceramic having negative resistance/temperature characteristics and semiconductor ceramic component utilizing the same

Kenjiro Mihara; Hideaki Niimi; Terunobu Ishikawa


Archive | 1999

Semiconductor ceramic, for negative temperature coefficient of resistance semiconductor devices, comprises lanthanum-cobalt oxide containing chromium oxide and alkali metal, alkaline earth metal, nickel, copper and-or zinc oxides

Satoshi Ueno; Akinori Nakayama; Terunobu Ishikawa; Hideaki Niimi; Yoichi Kawase


Archive | 1999

Halbleiterkeramik und Halbleiterkeramikvorrichtung

Satoshi Ueno; Akinori Nakayama; Terunobu Ishikawa; Hideaki Niimi; Yoichi Kawase


Archive | 1999

Halbleitende Keramik und Verwendung derselben

Terunobu Ishikawa; Yoichi Nagaokakyo Kawase; Akinori Nagaokakyo Nakayama; Hideaki Niimi; Satoshi Nagaokakyo Ueno


Archive | 1999

Halbleitende Keramik und Verwendung derselben Semiconducting Ceramics and using the same

Terunobu Ishikawa; Yoichi Nagaokakyo Kawase; Akinori Nagaokakyo Nakayama; Hideaki Niimi; Satoshi Nagaokakyo Ueno

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