Tetsuhiko Miyadera

Simple and Scalable Gel-Based Separation of Metallic and Semiconducting Carbon Nanotubes

We report a rapid and scalable method for the separation of metallic and semiconducting single-wall carbon nanotubes (SWCNTs); the separation is performed by the selective adsorption of semiconducting SWCNTs on agarose gel. The most effective separation was realized by a simple procedure in which a piece of gel containing SWCNTs and sodium dodecyl sulfate was frozen, thawed, and squeezed. This process affords a solution containing 70% pure metallic SWCNTs and leaves a gel containing 95% pure semiconducting SWCNTs. Field-effect transistors constructed from the separated semiconducting SWCNTs have been demonstrated to function without any electrical breakdown.

Contact-metal dependent current injection in pentacene thin-film transistors

Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

Charge injection process in organic field-effect transistors

The charge injection process in top-contact organic field-effect transistors was energetically observed with displacement of the Fermi level as a result of scanning the gate voltage. Doping of charge-transfer molecules into the metal/organic interface resulted in low interface resistance, which unveiled the bulk transport of the injected charges from the contact metal into the channel. The authors found that the bulk transport clearly obeys the Meyer-Neldel rule, according to which the exponential density of states near the band edge limits the charge injection.

Bias stress instability in pentacene thin film transistors: Contact resistance change and channel threshold voltage shift

Bias stress instability in top-contact pentacene thin film transistors was observed to be correlated not only to the channel but also to the metal/organic contact. The drain current decay under bias stress results from the combination of the contact resistance change and the threshold voltage shift in the channel. The contact resistance change is contact-metal dependent, though the corresponding channel threshold voltage shifts are similar. The results suggest that the time-dependent charge trapping into the deep trap states in both the contact and channel regions is responsible for the bias stress effect in organic thin film transistors.

Correlation between grain size and device parameters in pentacene thin film transistors

We develop a general approach to precisely extract the device parameters in top-contact pentacene thin film transistors. The charge trap sites are clarified by analyzing the grain size dependence of the device parameters. The channel mobility and threshold voltage are limited by the charge traps in the channel region, most of which are located not at the grain boundaries but at the organic/insulating-layer interface. The contact resistance decreases by increasing the grain size and is controlled by the charge traps in the contact region, which are suggested to be concentrated at the grain boundaries and at the metal/organic interface.

Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors

A bottom-up fabrication technique for the preparation of self-organizedorganic field-effect transistors(OFETs) on flexible plastic substrates is presented. Solution-based self-organization of OFETs is achieved by patterning the insulator surface with solution-wettable and unwettable regions. The proposed method satisfies several important requirements of printable electronics, including reduction in energy consumption, minimization of facilities, and the on-demand use of molecular materials.Self-organizedOFETs display an average mobility of 0.53 cm 2 / ( V s ) , on/off ratio of 10 9 , and subthreshold slope of 0.18 V/dec, with near-zero and narrowly distributed threshold voltage. An inverter circuit prepared using these devices is demonstrated with high signal gain.

Charge trapping induced current instability in pentacene thin film transistors : Trapping barrier and effect of surface treatment

The current instability of pentacene thin film transistors is described by the energetic distribution of the barrier height for the trapping of mobile charges at the organic/insulator interface. The trapping energy was quantitatively analyzed by measuring the temperature dependence of current decay, which follows a stretched exponential function. The distribution of the barrier becomes higher and narrower by the use of a self assembled monolayer (SAM) on the insulator surface, whereas the pentacene film morphology has little influence on the trapping barriers. The increase in the barrier height in the SAM-treated device suppresses charge trapping, resulting in stable device operation.

Glancing angle deposition of copper iodide nanocrystals for efficient organic photovoltaics.

We report a simple method to achieve efficient nanostructured organic photovoltaics via patterning copper iodide (CuI) nanocrystals on indium tin oxide by glancing angle deposition. The strong interfacial interaction between zinc phthalocyanine (ZnPc) and CuI leads to the formation of nanopillar arrays with lying-down molecular order, which greatly improve light absorption and surface roughness for exciton dissociation. Optimized ZnPc/C(60) bilayer cell has a power conversion efficiency of 4.0 ± 0.1%, which is about 3-fold larger than that of conventional planar cell.

Selective organization of solution-processed organic field-effect transistors

Semiconductor channels of organic field-effect transistors have been directly self-organized from a solution phase. The alkyl-modified surface was locally patterned by using a phenyl self-assembled monolayer (SAM) for the channels. Drop-cast small organic molecules were selectively crystallized on the phenyl SAM region. The self-organized process allows the simultaneous formation of polycrystalline transistor arrays from the patterned channels. The phenyl SAM under the channel is critical for the improvement of device stability. Further optimization of the deposition process realized direct growth of a single crystal channel from solution between prefabricated electrodes, and the single-crystal transistors exhibited excellent performance.

Current transport in short channel top-contact pentacene field-effect transistors investigated with the selective molecular doping technique

The contact doping profile is controlled in the top-contact configuration to clarify a transistor operation based on a current injection process from the metal contact to the organic channel in a submicron channel pentacene field-effect transistor. The molecular doping in the pentacene film underneath the metal contact, in which a thin layer of iron (III) chloride was introduced, drastically changes transistor characteristics. The doping profile control directly revealed the resistive part for current injection. A model to explain the saturation behavior of the top-contact short channel organic transistor is presented.