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Publication
Featured researches published by Tetsuya Kuwashima.
IEEE Transactions on Magnetics | 2006
Takeo Kagami; Tetsuya Kuwashima; Satoshi Miura; Takumi Uesugi; Kazuhiro Barada; Naoki Ohta; Noriaki Kasahara; Kazuki Sato; Takayasu Kanaya; Hiroshi Kiyono; Nozomu Hachisuka; Shunji Saruki; Kenji Inage; Norio Takahashi; Koichi Terunuma
Practical level performance for /spl sim/200 Gb/in/sup 2/ has been verified by AlOx barrier tunneling magnetoresistive (TMR) heads, which resistance area product (RA) is more than 3 ohm/spl middot//spl mu/m/sup 2/, in perpendicular recording mode. In addition, improved AlOx barrier magnetic tunnel junctions (MTJs) formed on plated bottom shield with smoothed surface achieved TMR ratio of 25% and 16% with RA of 1.9 and 1.0 ohm/spl middot//spl mu/m/sup 2/, respectively, indicating over 200 Gb/in/sup 2/ is also possible by the AlOx barrier TMR heads with lower RA. Furthermore, TMR heads with crystalline MgO barrier were fabricated. The MgO barrier MTJs formed on plated bottom shield with smoothed surface achieved TMR ratio of 88% with RA of 2.0 ohm/spl middot//spl mu/m/sup 2/, which is 3.5 times higher than that of AlOx barrier MTJs under similar RA. Dynamic electrical test was also performed for TMR heads with the MgO barrier. As a result, good readback waveform with huge output was obtained. This is the first confirmation of readback waveform generated from TMR heads with crystalline MgO barrier. Our results indicate that the future of TMR heads technology is promising beyond 200 Gb/in/sup 2/ application.
IEEE Transactions on Magnetics | 2004
Tetsuya Kuwashima; Kazumasa Fukuda; Hiroshi Kiyono; Kazuki Sato; Takeo Kagami; S. Saruki; Takumi Uesugi; Noriaki Kasahara; Naoki Ohta; Kentaro Nagai; Nozomu Hachisuka; Norio Takahashi; Masamu Naoe; Satoshi Miura; Kazuhiro Barada; Takayasu Kanaya; Kenji Inage; Atsuo Kobayashi
Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. A low resistance and high delta R/R tunneling junction film has been developed and used for this study. The resistance area product and delta R/R are 3 /spl Omega//spl middot//spl mu/m/sup 2/ and 18%, respectively. Reliability that includes lifetime was also studied. We have found TuMR heads can be a promising candidate for 100 Gb/in/sup 2/ application.
ieee international magnetics conference | 2005
S. Saruki; Hiroshi Kiyono; Kazumasa Fukuda; Tetsuya Kuwashima; Nozomu Hachisuka; Kenji Inage; Takeo Kagami; Takumi Uesugi; Satoshi Miura; Kazuhiro Barada; Norio Takahashi; Naoki Ohta; Noriaki Kasahara; Kazuki Sato; Takayasu Kanaya; A. Kobayashi
1/f noise as time traces of the fluctuation and low-frequency noise (pulse noise) were observed in TMR heads. These were then related to the quality of the oxide layer in the TMR heads.
Archive | 2005
Hiroshi Kiyono; Tetsuya Kuwashima; Takeo Kagami; Noriaki Kasahara; Naoki Ohta; Nozomu Hachisuka
IEEE Transactions on Magnetics | 2002
Satoru Araki; Kazuki Sato; Takeo Kagami; S. Saruki; Takumi Uesugi; Noriaki Kasahara; Tetsuya Kuwashima; Naoki Ohta; Jijun Sun; Kentaro Nagai; Shuxiang Li; Nozomu Hachisuka; Hitoshi Hatate; Tsuneo Kagotani; Norio Takahashi; Kunihiro Ueda; Mikio Matsuzaki
Archive | 2002
Takeo Kagami; Naoki Ohta; Tetsuya Kuwashima
Archive | 2003
Takeo Kagami; Tetsuya Kuwashima; Norio Takahashi
Archive | 2007
Takeo Kagami; Tetsuya Kuwashima; Kentaro Nagai
Archive | 2007
Naoki Ohta; Tetsuya Kuwashima
Archive | 2003
Takeo Kagami; Kazuki Sato; Takayasu Kanaya; Shunji Saruki; Tetsuya Kuwashima
