Theodoros Dimopoulos

Photovoltaic properties of thin film heterojunctions with cupric oxide absorber

In this work, we report on the fabrication, characterization, and photovoltaic properties of sputter-deposited, thin film heterojunctions combining p-type cupric oxide (CuO) absorber with n-type ZnO. The structural investigation reveals highly crystalline, columnar growth of the layers and confirms that the absorbers phase is purely CuO, with only negligible traces of Cu2O. The optical characterization yields for CuO an indirect bandgap of 1.2 eV and a direct optical transition at approximately 3 eV. The short circuit current, open circuit voltage, fill factor, and power conversion efficiency of the heterojunction solar cells were extracted as a function of the CuO thickness under AM1.5 G (1 kW/m2) illumination. From the observed dependencies, we conclude that the photovoltaic performance is compromised by a restricted carrier collection efficiency, caused by the small carrier lifetime in CuO. Indeed, the carrier population is found to decay with time constants of 40 and 460 ps. A maximum power conversio...

Characterization of embedded MgO/ferromagnet contacts for spin injection in silicon

In this work we present the structural and electrical characterization of sputter-deposited CoFe(B)/MgO/Si metal-insulator-semiconductor tunneling junctions for injection and detection of spin polarized current in silicon. The multilayers have been deposited in 700 nm deep trenches, patterned in thick SiO2 dielectric, on n- and p-doped wafers. The films inside the trenches are continuous with a correlated and low roughness. The MgO barrier grows amorphous without indication of pinholes. The dc and ac transport properties of the junctions were studied as a function of temperature and frequency. A relatively high interface trap density at the MgO/Si-interface is extracted from admittance spectra measurements. Transport is dominated by majority carriers in the case of n-doped and by minority carriers for the p-doped wafers. This leads to distinct rectification characteristics for the two wafer types, which would significantly influence the spin injection efficiency of the tunneling junctions.

TEM Study on Diffusion Process of NiFe Schottky and MgO/NiFe Tunneling Diodes for Spin Injection in Silicon

Analytical electron microscopy is employed to study the structural properties of NiFe Schottky diodes and NiFe/MgO tunneling diodes after annealing up to 400° C. Electrical characterization revealed a drop of the barrier height for the Schottky diodes, while the tunneling diodes are thermally stable. From the cross-sectional TEM images of the Schottky diodes, metal diffusion into Si substrate was found. Investigations of the diffusion using energy dispersive spectroscopy and energy filtered transmission electron microscopy revealed that Ni diffused into the Si substrate to form nickel silicide. Moreover, in some cases, the gold capping layer also diffused into the substrate even deeper than Ni. In the case of the tunneling diodes, metal diffusion was inhibited by the presence of MgO.

Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co70Fe30, Co40Fe40B20 and Ni80Fe20), the silicon doping density (1015 to 1018 cm−3), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 °C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current–voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

Fluxgate Principle Applied to a Magnetic Tunnel Junction for Weak Magnetic Field Sensing

A method is presented for measuring weak magnetic fields by applying a measurement principle known from fluxgate magnetometers to a magnetic tunnel junction. The fluxgate measurement principle based on second harmonic detection is transferred to magnetic tunnel junctions embedded in current lines. Based on Fourier analysis, we developed an analytical model to describe the response of a magnetic tunnel junction fluxgate sensor. The analytical result is compared to MATLAB simulations using Fast Fourier Transformation. Experimental results are obtained with a sensor prototype using lock-in amplification to detect the second harmonic component of the signal generated by the resistance change of the junction. A linear sensor characteristic with a sensitivity in the order of mV/mT is detected in an unshielded setup. Design improvements of the sensor layout as well as a low RA product of the magnetic tunnel junctions should make it possible in the future to detect pT-fields. A cheap sensing technology using magnetic tunnel junctions with the ability of measuring fields in the order of pT could promote novel diagnostic methods such as magnetocardiography into daily clinical routine.

Investigation of NiOx-hole transport layers in triple cation perovskite solar cells

Perovskite solar cells with a planar p-i-n device structure offer easy processability at low temperatures, suitable for roll-to-roll fabrication on flexible substrates. Herein we investigate different hole transport layers (solution processed NiOx, sputtered NiOx, PEDOT:PSS) in planar p-i-n perovskite solar cells using the triple cation lead halide perovskite Cs0.08(MA0.17FA0.83)0.92Pb(I0.83Br0.17)3 as absorber layer. Overall, reproducible solar cell performances with power conversion efficiencies up to 12.8% were obtained using solution processed NiOx as hole transport layer in the devices. Compared to that, devices with PEDOT:PSS as hole transport layer yield efficiencies of approx. 8.4%. Further improvement of the fill factor was achieved by the use of an additional zinc oxide nanoparticle layer between the PC60BM film and the Ag electrode.

Effect of AZO substrates on self-seeded electrochemical growth of vertically aligned ZnO nanorod arrays and their optical properties

We present a single step and an electrochemical synthesis of vertically aligned ZnO nanorod (NR) arrays, directly on transparent aluminium-doped zinc oxide (AZO) electrodes. The NRs grow from mild, aqueous-based solution at low temperature, with no need for catalysts or additional seed layer. The use of textured AZO as substrate allows for highly effective growth of hexagonally faceted, single-crystalline ZnO NRs along the wurtzite c-axis. The matching of the crystal lattices initiates a self-seeding route, thus the inherent growth habit of the AZO crystallites advances the vertical growth and alignment of NRs. Moreover, the thickness dependant grain size of the AZO layer provides a valuable feature for tuning the diameter of ZnO NRs grown atop. In the absence of any seed mediator, the interfacial quality is expected to improve significantly. This should enhance the thermal and electrical transport throughout the whole nanostructured transparent electrode. The NR growth was investigated under systematic manipulation of the synthesis variables in order to optimize growth conditions for highly aligned, single-crystalline NRs with a large aspect ratio and a good optical quality. The structure and optical property of the AZO/ZnO NR ensembles were characterized by atomic force microscopy, scanning electron microscopy, X-ray diffraction, photoluminescence, and ultravioletvisible transmission spectroscopy.

Magnetic properties of embedded ferromagnetic contacts to silicon for spin injection

We investigate the magnetic properties of arrays of sputter-deposited, Co70Fe30/Ni80Fe20 and Co40Fe40B20 contacts to silicon, embedded into 42 nm thick SiO2 dielectric. The contacts have rectangular shapes with blunt edges, sub-micrometre width and different aspect ratios. They are deposited either directly on silicon, forming Schottky junctions or on top of an MgO tunnel barriers with varying thickness. The MgO and CoFeB electrode are amorphous while the CoFe/NiFe bilayer is polycrystalline. The magnetization switching characteristics are studied by means of the magneto-optical Kerr effect and magnetic force microscopy. The switching field and its distribution within the array are found to depend on the thickness of the MgO and the ferromagnet (FM). Switching is mostly determined by the contacts width by means of end domains formed at the blunt edges. An influence of the length for wider contacts is also demonstrated. Despite a small angle magnetization misalignment along the contact, the remanence is high in all cases. The switching characteristics are shown to deteriorate after high temperature annealing, especially for the amorphous CoFeB FM due to the onset of crystallization.

A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

We present a TEM/STEM study of the structure and thermal stability of Co/AlOx/Si, CoFe(B)/MgO/Si and FeNi/SiOx/Si magnetic junctions deposited directly on patterned Si. In all three types of junctions the films are uniform and continuous. Annealing at 300 at 550 ?C does not change their structure. CoFe and CoFeB layers remained amorphous after the annealing process.

High performance and low cost transparent electrodes based on ultrathin Cu layer

Transparent electrodes based on an ultrathin Cu layer, embedded between two dielectrics, are optimized by simulations and experiments. Different dielectrics are screened in transfer matrix simulations for maximizing the broad-band transmittance. Based on this, sputtered electrodes were developed with the Cu embedded between TiOX-coated glass or PET substrate and an Al-doped ZnO (AZO) top layer. It is found that, for ultrathin Cu layers, increased sputter power fosters island coalescence, leading to superior optical and electrical performance compared to previously reported Cu-based electrodes. Simulations showed that the electrode design optimized with air as ambient medium has to be adapted in the case of electrode implementation in a hybrid perovskite solar cell of inverted architecture.