Thomas A. Baginski

A Robust One-Shot Switch for High-Power Pulse Applications

High-voltage switches capable of operating at high speeds and over a wide range of voltages and energies are used in a wide variety of applications in material science and plasma physics. This paper discusses the fabrication and characterization of a novel high-voltage shock switch. The structure has been designed to operate as a fast-turn-on, low-impedance device. The switch is a planar structure that allows for direct integration into the stripline geometries used in a conventional capacitive discharge unit.

Novel Electroexplosive Device Incorporating a Reactive Laminated Metallic Bridge

The description and characterization of a novel, low e ring-current, semiconductor-based, scaleable monolithic electroexplosive device is presented. The device consists of a metallic (palladium) bowtie-shaped heating element, which has been selectively coated with a reactive metal (zirconium)to enhance ignition of a conventional pyrotechnic mix. Integrated diodes provide protection against electro-static discharge events. The device was specie cally cone gured to allow ease of interconnect by wirebonds, conductive epoxy, or solder. The structure was fabricated with conventional microelectronic techniques that allow for very economical manufacturing. Extensive design validation testing was performed. Parts with 0.5A/10 s no-e re at 99.999% reliability/95% cone dence and function time to peak pressure of <1 ms were demonstrated.

The semiconductor junction igniter: a novel RF and ESD insensitive electro-explosive device

The description and characterization of a monolithic, solid-state electroexplosive device are presented. The structure is inherently immune to radio frequency (RF) radiation and also offers protection from electrostatic discharge (ESD). Interconnection to the device can be accomplished by a variety of techniques, such as soldering, epoxy, etc. Standard microelectronic techniques were utilized for fabrication. The devices can be manufactured very economically and in large quantities. >

Characterization of a nonohmic RF-insensitive solid-state ignition element

A monolithic solid-state electro-explosive initiator which consists of Schottky barriers or p-n junctions fabricated on opposite sides of a silicon wafer is discussed. Thermal characterization of the structure was performed during radio frequency excitation to demonstrate RF insensitivity. >

Hazard of low-frequency electromagnetic coupling of overhead power transmission lines to electroexplosive devices

The purpose of this investigation was to determine whether the fields generated by overhead transmission lines and stations pose a hazard to electroexplosive devices (EEDs). An analysis showed that under worst-case conditions, the maximum induced current in an EED resulting from power-line coupling is approximately 6.3 mA for the case of electric field coupling and 0.67 mA for the case of magnetic field coupling. The no-fire levels of numerous devices including, but not limited to, impulse cartridges, blasting caps, detonations, flares, switches, and pressure cartridges were compared to determine the most sensitive. It was concluded that worst-case coupling assumed in the analysis is insufficient to induce a hazardous current level in an EED. >

Micromachined Planar Triggered Spark Gap Switch

High voltage switches capable of operating at high speeds with high current levels are used in a variety of applications in commercial and government systems. This paper discusses the fabrication and characterization of a novel micromachined planar triggered spark gap switch. The switch provides a low cost alternative to conventional triggered spark gap switches. The structure is designed for direct integration into the strip-line geometries used in a conventional capacitive discharge unit. The geometry of the device was selected to minimize parasitic impedances associated with conventional firing circuits.

A high-voltage single-shot switch implemented with a MOSFET current source and avalanche diode

The description of a novel circuit which utilizes a field-effect transistor (FET) current source and a high-voltage diode to realize a simple inexpensive single-shot high-voltage switch is presented. The switch was specifically designed for use with fast low-impedance pulse-power discharge circuits such as those commonly used for plasma physics and high-pressure research. This switch can also be utilized in any application where speed, low cost and small size are important concerns. The design readily lends itself to implementation as a discrete component or hybrid circuit. The circuit has been simulated and the design parameters of the configuration have been numerically investigated utilizing PSPICE. These simulations and experimental data are presented.

Two novel monolithic silicon substrate slapper detonators

Two slapper detonators constructed of silicon with conventional microelectronic fabrication techniques were demonstrated. In both devices, a barrel was formed by preferentially etching a cavity in the substrate. The conductive bow-tie of the slapper was fabricated by two different techniques. The first technique involved selectively depositing metal at the base of the cavity (i.e., metal bow-tie structure). The second approach involved the selective diffusion of impurities into the base of the cavity to greatly increase the conductivity of the silicon (i.e., diffused bow-tie structure). It is demonstrated that both devices operated as intended. The diffused bow-tie device exhibited an interesting effect due to the negative thermal coefficient of the resistivity of the silicon. The effect may be exploited to improve the EMI (electromagnetic interference) and ESD (electrostatic discharge) insensitivity of the device.<<ETX>>

Characterization of a novel passive RF filter for frequencies of 4-225 MHz

The design and experimental characterization of a passive RF (4-225 MHz) filter pertinent to industrial and military aviation environments is presented. The filter utilizes three different low-pass stages and a simple DC discriminating circuit. A detailed theoretical analysis (lumped parameter modeling) of the filters frequency response is provided. Even though it is not part of the initial design criteria, the filter also effectively blocks both out-of-band high-frequency (f>225 MHz) and low-frequency (f>4 MHz) harmonics. >

An introduction to gold gettering in silicon

Metals, and particularly gold, introduce electrical states into silicon which act as traps for charge carriers. While this is desirable in some devices, in others it degrades performance and must be removed by gettering. This paper discusses the problem, and presents experimental studies on the mechanism of intrinsic gettering of gold.