Thomas Aref

Fabrication of symmetric sub-5 nm nanopores using focused ion and electron beams

Nanopores fabricated in solid-state membranes have previously been used for the rapid electrical detection and characterization of single biopolymer molecules. Various methods for producing solid-state nanopores have been reported, but fabricating nanopores of desired sizes controllably is still challenging. Here we report a fabrication technique which uses a focused ion beam (FIB) system to engineer nanopores precisely. This technique provides visual feedback over the formation process. The present method can produce highly symmetrical nanopores with diameters smaller than ~5?nm and can be used to create an array of multiple nanopores simultaneously. In addition, nanopores produced using the focused ion beam sculpting technique can be tailored down to less than 1?nm in diameter using high-energy electron radiation.

High-resolution nanofabrication using a highly focused electron beam

A highly focused electron beam can be used to shape nanodevices. We demonstrate electron beam etching of nanoholes through multiwalled carbon nanotubes (MWNTs) and niobium nanowires. Nanoholes, as small as ∼2.5 nm in diameter, can be reproducibly fabricated. This technique can also be used to fabricate constrictions and larger nanoholes in MWNTs. We argue that with some improvement, this technique might be used to pattern suspended graphene by the removal of targeted single atoms.

Current-phase relationship, thermal and quantum phase slips in superconducting nanowires made on a scaffold created using adhesive tape.

Quantum phase slippage (QPS) in a superconducting nanowire is a new candidate for developing a quantum bit [Mooij et al. New J. Phys. 2005, 7, 219; Mooij et al. Nat. Phys. 2006, 2, 169; Khlebnikov http://arxiv.org/abs/quant-ph/0210019 2007]. It has also been theoretically predicted that the occurrence of QPS significantly changes the current-phase relationship (CPR) of the wire due to the tunneling between topologically different metastable states [Khlebnikov Phys. Rev. B 2008, 78, 014512]. We present studies on the microwave response of the superconducting nanowires to reveal their CPRs. First, we demonstrate a simple nanowire fabrication technique, based on commercially available adhesive tapes, which allows making thin superconducting wire from different metals. We compare the resistance vs temperature curves of Mo(76)Ge(24) and Al nanowires to the classical and quantum models of phase slips. In order to describe the experimentally observed microwave responses of these nanowires, we use the McCumber-Stewart model [McCumber J. Appl. Phys. 1968, 39, 3113; Stewart Appl. Phys. Lett. 1968, 12, 277], which is generalized to include either classical or quantum CPR.

Quantitative analysis of quantum phase slips in superconducting Mo76Ge24 nanowires revealed by switching-current statistics

We measure quantum and thermal phase-slip rates using the standard deviation of the switching current in superconducting nanowires at high bias current. Our rigorous quantitative analysis provides firm evidence for the presence of quantum phase slips (QPS) in homogeneous nanowires. We observe that as temperature is lowered, thermal fluctuations freeze at a characteristic crossover temperature Tq, below which the dispersion of the switching current saturates to a constant value, indicating the presence of QPS. The scaling of the crossover temperature Tq with the critical temperature Tc is linear, which is consistent with the theory of macroscopic quantum tunneling. We can convert the wires from the initial amorphous phase to a single crystal phase, in situ, by applying calibrated voltage pulses. This technique allows us to probe directly the effects of the wire resistance, critical temperature and morphology on thermal and quantum phase slips.

Universal Features of Counting Statistics of Thermal and Quantum Phase Slips in Nanosize Superconducting Circuits

We perform measurements of phase-slip-induced switching current events on different types of superconducting weak links and systematically study statistical properties of the switching current distributions. We employ two types of devices in which a weak link is formed either by a superconducting nanowire or by a graphene flake subject to proximity effect. We demonstrate that independently of the nature of the weak link, higher moments of the distribution take universal values. In particular, the third moment (skewness) of the distribution is close to -1 both in thermal and quantum regimes. The fourth moment (kurtosis) also takes a universal value close to 5. The discovered universality of skewness and kurtosis is confirmed by an analytical model. Our numerical analysis shows that introduction of extraneous noise into the system leads to significant deviations from the universal values. We suggest using the discovered universality of higher moments as a robust tool for checking against undesirable effects on noise in various types of measurements.

Little-Parks oscillations at low temperatures: Gigahertz resonator method

A thin-film Fabry–Perot superconducting resonator is used to reveal the Little and Parks (LP) effect [Phys. Rev. Lett. 9, 9 (1962)], even at temperatures much lower than the critical temperature. A pair of parallel nanowires is incorporated into the resonator at the point of the supercurrent antinode. As the magnetic field is ramped, Meissner currents develop, changing the resonance frequency of the resonator. The LP oscillation is revealed as a periodic set of distorted parabolas observed in the transmission of the resonator and corresponds to the states of the wire loop having different vorticities. We also report a direct observation of single and double phase slip events.

Precise in situ tuning of the critical current of a superconducting nanowire using high bias voltage pulses

We present a method for in situ tuning of the critical current (or switching current) and critical temperature of a superconducting MoGe nanowire using high bias voltage pulses. Our main finding is that as the pulse voltage is increased, the nanowire demonstrates a reduction, a minimum and then an enhancement of the switching current and critical temperature. Using controlled pulsing, the switching current of a superconducting nanowire can be set exactly to a desired value. These results correlate with in situ transmission electron microscope imaging where an initially amorphous nanowire transforms into a single crystal nanowire by high bias voltage pulses. We compare our transport measurements to a thermally activated model of Littles phase slips in nanowires.

Nanoslits in silicon chips

Potassium hydroxide (KOH) etching of a patterned [100] oriented silicon wafer produces V-shaped etch pits. We demonstrate that the remaining thickness of silicon at the tip of the etch pit can be reduced to approximately 5 microm using an appropriately sized etch mask and optical feedback. Starting from such an etched chip, we have developed two different routes for fabricating 100 nm scale slits that penetrate through the macroscopic silicon chip (the slits are approximately 850 microm wide at one face of the chip and gradually narrow to approximately 100-200 nm wide at the opposite face of the chip). In the first process, the etched chips are sonicated to break the thin silicon at the tip of the etch pit and then further KOH etched to form a narrow slit. In the second process, focused ion beam milling is used to etch through the thin silicon at the tip of the etch pit. The first method has the advantage that it uses only low-resolution technology while the second method offers more control over the length and width of the slit. Our slits can be used for preparing mechanically stable, transmission electron microscopy samples compatible with electrical transport measurements or as nanostencils for depositing nanowires seamlessly connected to their contact pads.