Thomas Haber

Development of an Itraconazole-loaded nanostructured lipid carrier (NLC) formulation for pulmonary application

Itraconazole-loaded NLC for pulmonary application were developed. In Precirol ATO 5 and oleic acid Itraconazole had the highest solubility. The solid lipid and the oil were mixable in a ratio 9:1 possessing a melting point above body temperature. 0.4% Itraconazole was dissolved in this lipid blend. Eumulgin SLM 20 was the stabilizer with the highest affinity to the lipid blend used as particle matrix. 2.5% Eumulgin SLM 20 was sufficient to obtain NLC with a narrow particle size distribution and sufficient stability. The tonicity of the formulation was adjusted with glycerol. Sterility was obtained by autoclaving. Neither the addition of glycerol nor autoclaving had an influence on the particle size and the zeta potential of Itraconazole-loaded NLC. SEM images showed spherical particles confirming the particle size measured by light scattering techniques. An entrapment efficiency of 98.78% was achieved. Burst release of Itraconazole from the developed carrier system was found. Itraconazole-loaded NLC possessed good storage stability. Nebulizing Itraconazole-loaded NLC with a jet stream and an ultrasonic nebulizer had no influence on the particle size and the entrapment efficiency of Itraconazole in the particle matrix, being a precondition for pulmonary application.

Fabrication of n‐ and p‐Type Organic Thin Film Transistors with Minimized Gate Overlaps by Self‐Aligned Nanoimprinting

[∗] U. Palfi nger , C. Auner , H. Gold , A. Haase , J. Kraxner , G. Jakopic , J. R. Krenn , B. Stadlober Institute of Nanostructured Materials and Photonics Joanneum Research GmbH Franz-Pichlerstrasse 30, A-8160 Weiz (Austria) Fax: 0043-316-876-2710 Telephone: 0043-316-876-2721 E-mail: barbara.stadlober@joanneum.at T. Haber , M. Sezen , W. Grogger Institute for Electron Microscopy Graz University of Technology Steyrergasse 17, A-8010 Graz (Austria) G. Domann Fraunhofer-Institut für Silicatforschung ISC Neunerplatz 2, D-97082 Würzburg (Germany)

Fundamental Proximity Effects in Focused electron Beam Induced Deposition

Fundamental proximity effects for electron beam induced deposition processes on nonflat surfaces were studied experimentally and via simulation. Two specific effects were elucidated and exploited to considerably increase the volumetric growth rate of this nanoscale direct write method: (1) increasing the scanning electron pitch to the scale of the lateral electron straggle increased the volumetric growth rate by 250% by enhancing the effective forward scattered, backscattered, and secondary electron coefficients as well as by strong recollection effects of adjacent features; and (2) strategic patterning sequences are introduced to reduce precursor depletion effects which increase volumetric growth rates by more than 90%, demonstrating the strong influence of patterning parameters on the final performance of this powerful direct write technique.

Sexithiophene films on clean and oxidized Si(111) surfaces: Growth and electronic structure

The growth and the electronic properties of sexithiophene thin films on silicon surfaces have been studied by angle resolved ultraviolet photoelectron spectroscopy while morphology and crystalline order have been assessed by atomic force microscopy and x-ray diffraction. The influence of the surface modification of the substrate as well as of the growth temperature and the growth rate were investigated in ultrahigh vacuum through controlled multistep growth sequences ranging from (sub)monolayer coverage up to thick films. Depending on the preparation, two electronically distinct sexithiophene (6T) films could be produced, as revealed by their ionization potentials which differed by ∼0.7eV. The evolution of the electronic energy levels with film thickness is considered in terms of the concepts of interface dipole and band bending, with the latter being argued to be inappropriate. Irrespective of substrate or growth conditions the thick 6T films were found to all have the same work function of ∼0.4eV, which...

Diffusion of Ag into Organic Semiconducting Materials: A Combined Analytical Study Using Transmission Electron Microscopy and X-ray Reflectivity

This study shows that the morphology of organic/metal interfaces strongly depends on process parameters and the involved materials. The interface between organic n-type blocking layer materials and the top Ag cathode within an organic photodiode was investigated. Ag was deposited on either amorphous tris-8-hydroxyquinolinato-aluminum (Alq(3)) or crystalline 4,7-diphenyl-1,10-phenanthroline (Bphen) using different deposition techniques such as electron beam deposition, ion beam sputtering, and vacuum thermal evaporation at various deposition rates. The interfaces were studied by transmission electron microscopy and X-ray reflectivity. It was found that Bphen does not show any Ag diffusion no matter which deposition technique was used, whereas the Ag diffusion into Alq(3) depends on the deposition technique and the deposition rate. The highest amount of Ag diffusion into Alq(3) occurred by using thermal vacuum deposition at low deposition rates.