Thomas Meister

A 77GHz 4-channel automotive radar transceiver in SiGe

A fully integrated 4-channel automotive radar transceiver chip, integrated in a 200-GHz SiGe:C production technology, is presented. With a typical transmit power of 2 x +7 dBm at the antenna ports and all functions active, the chip draws a current of about 600 mA from a single 5.5 V supply. The design permits FMCW operation in the 76 to 77 GHz band at chip-backside temperatures from -40degC to +125degC.

Towards THz SiGe HBTs

This paper summarizes the technological developments carried out on SiGe HBTs in the frame of the European project DOTFIVE. The architectures of the different partners and their performances are presented and discussed showing that the project objectives have been met.

A low-noise, and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technology

An active down-conversion mixer for automotive radar applications at 76 GHz to 81 GHz was realized in a 200 GHz f/sub T/ SiGe bipolar technology. A conversion gain of more than 24 dB and a single-sideband noise figure of less than 14 dB is achieved. The 1 dB output compression point is -4 dBm. The power consumption is 300 mW at -5 V supply voltage.

86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology

We present static and dynamic frequency dividers manufactured in a 200 GHz f/sub T/ SiGe bipolar technology. The static divider has a divide ratio of 32 and operates up to 86.2 GHz. The dynamic divider is based on regenerative frequency division and has a divide ratio of two. It operates up to 110 GHz (limited by the measurement equipment). The power consumption of the static and dynamic frequency dividers is 900 mW and 310 mW, respectively.

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990 mW at a supply of -5.5 V.

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP. After half of the project duration Infineon has developed a 130 nm SiGe BiCMOS technology with fT of 250 GHz and fmax of 370 GHz. State-of-the-art MMIC performance is demonstrated by a 77 GHz automotive radar transmitter. The suitability of IHṔs advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms is demonstrated by integrating it in Infineons 130 nm process resulting in an fmax of 500 GHz, 1.8 ps gate delay and a record 161 GHz static frequency divider. IHP has achieved an fmax of 570 GHz for the first time using an HBT concept with non-selective epitaxial base deposition and an elevated extrinsic base.

15 GHz wideband amplifier with 2.8 dB noise figure in SiGe bipolar technology

We present a wideband amplifier with 12 dB gain and a 3-dB bandwidth of 15 GHz. The noise figure is 2.8 dB for frequencies up to 10 GHz and 4 dB at 15 GHz. The circuit is manufactured in an advanced SiGe bipolar technology and consumes 7.2 mA from a 3.3 V supply.

High-speed SiGe:C bipolar technology

A SiGe:C bipolar technology with a narrow base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 106 GHz at a collector emitter breakdown voltage of 2.3 V, a maximum oscillation frequency of 145 GHz, and 6.5 ps gate delay demonstrate balanced transistor performance. State-of-the-art results for high-speed digital, analog, and low-power circuits are achieved.

SiGe bipolar technology for mixed digital and analogue RF applications

A SiGe bipolar technology with a low-resistivity base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 85 GHz, a maximum oscillation frequency of 128 GHz, 6.8 ps gate delay, and a minimum noise figure of 1.2 dB at 10 GHz demonstrate balanced transistor performance. With an 88 GHz dynamic frequency divider and a 12 GHz low noise amplifier with 1.9 dB noise figure, state-of-the-art results for digital as well as analogue applications are achieved.

A low-noise amplifier at 77 GHz in SiGe:C bipolar technology

A single ended low noise amplifler at 77GHz has been designed, implemented, and characterized. The focus was on a low noise flgure, reasonable input and out- put matching, and a high input compression point which are basic requirements for automotive radar applications or car{to{car communication systems. The LNA was fa- bricated in a 225GHz fT SiGe:C bipolar technology. At 77GHz, the measured gain of the LNA is 8.9dB, and the measured noise flgure at 77GHz is 4.8dB. The measured input compression point at 77GHz is -3dBm. The cir- cuit was designed for a supply voltage of 5.5V and draws 22mA.