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Thomas Olivier

French Alternative Energies and Atomic Energy Commission

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Archive | 2009

THREE-DIMENSIONAL INTEGRATED TRANSISTOR CIRCUIT HAVING DYNAMICALLY ADJUSTABLE THRESHOLD VOLTAGE

Batude Perrine; Clavelier Laurent; Jaud Marie-Anne; Thomas Olivier; Vinet Maud

Archive | 2008

Microelectronic device e.g. static RAM cell, manufacturing method, involves forming structures on substrate, and doping semiconductor zone of secondary block of structure using selective implantation of primary block of structures

Vinet Maud; Thomas Olivier; Rozeau Olivier; Poiroux Thierry

Archive | 2015

NON-VOLATILE RESISTIVE MEMORY CELL

Vianello Elisa; Molas Gabriel; Palma Giorgio; Thomas Olivier

Archive | 2008

CELLULE MEMOIRE DOTEE DE TRANSISTORS DOUBLE-GRILLE, A GRILLES INDEPENDANTES ET ASYMETRIQUES

Thomas Olivier; Vinet Maud

Archive | 2011

MOS-TRANSISTOR MIT FREI HÄNGENDEM GATE UND NICHTFLÜCHTIGER FUNKTIONSWEISE MIT PIEZOELEKTRISCHE AKTIVIERUNG UND HERSTELLUNGSVERFAHREN DESSELBEN

Collonge Michael; Thomas Olivier; Vinet Maud

Archive | 2011

NICHTFLÜCHTIGE SRAM-SPEICHERZELLE MIT TRANSISTOREN MIT BEWEGLICHEM GATE UND PIEZOELEKTRISCHER BETÄTIGUNG

Thomas Olivier; Collonge Michael; Vinet Maud

Archive | 2011

VERFAHREN ZUR HERSTELLUNG VON ASYMMETRISCHEN UND SYMMETRISCHEN DOPPELGATETRANSISTOREN AUF DEMSELBEN SUBSTRAT

Vinet Maud; Thomas Olivier; Rozeau Olivier; Poiroux Thierry

Archive | 2011

CIRCUIT A TRANSISTOR INTEGRES DANS TROIS DIMENSIONS ET AYANT UNE TENSION DE SEUIL VT AJUSTABLE DYNAMIQUEMENT

Batude Perrine; Clavelier Laurent; Jaud Marie Anne; Thomas Olivier; Vinet Maud

Archive | 2011

SRAM MEMORY CELL BASED ON TRANSISTORS OF INCREASED EFFECTIVE GATE WIDTH AND PRODUCTION PROCESS

Jaud Marie-Anne; Guillaumot Bernard; Thomas Olivier

Archive | 2010

Speicherzelle ausgestattet mit Transistoren mit Doppel-Gate, unabhängigen und asymmetrischen Gates

Thomas Olivier; Vinet Maud

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