Thong Leng Lim

First-principles LDA

Yttrium niobate () phosphor is studied experimentally and through first-principles calculations, in which the structural and electronic properties of are investigated using the local-density approximation LDA+U method. The absorption and luminescence experiments that were conducted on the host lattice show the band gap to be 4.1 eV. The LDA+U calculations allow us to obtain a band gap of 4.28 eV. The density of states obtained from the calculation shows that O 2p states contribute to the valence band. The lower conduction band is mainly composed of Nb 4d states, while the upper conduction bands involve contribution mainly from Y 4d states. The partial DOS of each atom in the niobate system is then compared to the ultraviolet (UV) and vacuum ultraviolet (VUV) spectra from A photoluminescence excitation (PLE) experiment to explain the nature of the bands observed.

+U

Abstract Mechanical and electronic properties of s-triazine sheet are studied using first-principles calculations based on density functional theory. The in-plane stiffness and bulk modulus for s-triazine sheet are found to be less than that of heptazine. The reduction can be related to the nature of the covalent bonds connecting the adjacent sheets and the number of atoms per unit cell. The Poisson’s ratio of s-triazine sheet is half the value to that of graphene. Additionally, the calculated values of the two critical strains (elastic and yielding points) of s-triazine sheet are in the same order of magnitude to that for heptazine which was calculated using MD simulations in the literature. It is also demonstrated that s-triazine sheet can withstand larger tension in the plastic region. These results established a stable mechanical property for s-triazine sheet. We found a linear relationship of bandgap as a function of bi-axial tensile strain within the harmonic elastic region. The reduced steric repulsion of the lone pairs (px-, py-) causes the pz-like orbital to shift to high energy, and consequently an increase in the bandgap. We find no electronic properties modulation of the s-triazine sheet under electric field up to a peak value of 10 V/nm. Such noble properties may be useful in future nanomaterial applications.

calculations and luminescence study of YNbO4

The search for the ground state structures of Boron clusters has been a difficult computational task due to the unique metalloid nature of Boron atom. Previous research works had overcome the problem in the search of the Boron ground-state structures by adding symmetry constraints prior to the process of locating the local minima in the potential energy surface (PES) of the Boron clusters. In this work, we shown that, with the deployment of a novel computational approach that incorporates density functional theory (DFT) into a guided global optimization search algorithm based on basin-hopping, it is possible to directly locate the local minima of small Boron clusters in the PES at the DFT level. The ground-state structures search algorithm as proposed in this work is initiated randomly and needs not a priori symmetry constraint artificially imposed throughout the search process. Small sized Boron clusters so obtained compare well to the results obtained by similar calculations in the literature. The electronic properties of each structures obtained are calculated within the DFT framework.

Theoretical studies on mechanical and electronic properties of s-triazine sheet

Abstract We employ first-principles calculations to study the mechanical, geometrical, electronic and magnetic properties of Fe atom embedded s-triazine () system under the influence of external environment. Our results show that the binding energy of can be modulated by an applied tensile deformation and perpendicular electric field. The non-magnetic semiconducting property of pure s-triazine sheet () is found to change upon embedding of Fe atom in the porous site of the sheet. It is revealed that the system exhibit half-metallic electronic character with a magnetic moment in the order similar to that of an isolated Fe atom. Furthermore, electronic and magnetic properties of the systems are preserved up to a maximum value of 10 V/nm in electric field strength and 6% tensile strain. Interestingly, we find that the half-metallic electronic character can be tuned into semiconductor via adsorption of atoms and molecules into the system. The magnetic moment of with adsorbed atoms/molecules is also modified. Our findings may serve as a guide for future applications of structures in spintronics devices.

Guided basin-hopping search of small boron clusters with density functional theory

Melting dynamics of hafnium clusters are investigated using a novel approach based on the idea of the chemical similarity index. Ground state configurations of small hafnium clusters are first derived using Basin-Hopping and Genetic Algorithm in the parallel tempering mode, employing the COMB potential in the energy calculator. These assumed ground state structures are verified by using the Low Lying Structures (LLS) method. The melting process is carried out either by using the direct heating method or prolonged simulated annealing. The melting point is identified by a caloric curve. However, it is found that the global similarity index is much more superior in locating premelting and total melting points of hafnium clusters.

Effects of atoms and molecules adsorption on electronic and magnetic properties of s-triazine with embedded Fe atom: DFT investigations

We report a theoretical study of the electronic and magnetic properties of rhodium-atomic clusters. The lowest energy structures at the semi-empirical level of rhodium clusters are first obtained from a novel global-minimum search algorithm, known as PTMBHGA, where Gupta potential is used to describe the atomic interaction among the rhodium atoms. The structures are then re-optimized at the density functional theory (DFT) level with exchange-correlation energy approximated by Perdew-Burke-Ernzerhof generalized gradient approximation. For the purpose of calculating the magnetic moment of a given cluster, we calculate the optimized structure as a function of the spin multiplicity within the DFT framework. The resultant magnetic moments with the lowest energies so obtained allow us to work out the magnetic moment as a function of cluster size. Rhodium atomic clusters are found to display a unique variation in the magnetic moment as the cluster size varies. However, Rh4 and Rh6 are found to be nonmagnetic. El...

Investigation of Melting Dynamics of Hafnium Clusters

We report a systematic study of the structural properties of rhodium clusters at the atomistic level. A novel global-minimum search algorithm, known as parallel tempering multicanonical basin hopping plus genetic algorithm (PTMBHGA), is used to obtain the geometrical structures with lowest minima at the semi-empirical level where Gupta potential is used to describe the atomic interaction among the rhodium atoms. These structures are then re-optimized at the density functional theory (DFT) level with exchange-correlation energy approximated by Perdew-Burke-Ernzerhof (PBE) generalized gradient approximation (GGA). The structures are optimized for different spin multiplicities. The ones with lowest energies will be taken as ground-state structures. In most cases, we observe only minor changes in the geometry and bond length of the clusters as a result of DFT-level re-optimization. Only in some limited cases, the initial geometries obtained from the PTMBHGA are modified by the re-optimization. The variation of structural properties, such as ground-state geometry, symmetry and binding energy, with respect to the cluster size is studied and agreed well with other results available in the literature.

Electronic and magnetic properties of small rhodium clusters

The melting behavior of bimetallic gold-platinum nanoclusters is studied by applying Brownian-type isothermal molecular dynamics (MD) simulation, a program modified from the cubic coupling scheme (CCS). The process begins with the ground-state structures obtained from global minimum search algorithm and proceeds with the investigation of the effect of temperature on the thermal properties of gold-platinum nanoalloy clusters. N-body Gupta potential has been employed in order to account for the interactions between gold and platinum atoms. The ground states of the nanoalloy clusters, which are core-shell segregated, are heated until they become thermally segregated. The detailed melting mechanism of the nanoalloy clusters is studied via this approach to provide insight into the thermal stability of the nanoalloy clusters.

Structural properties of small rhodium clusters

The effect of thermally annealing a slab of wurtzite ZnO, terminated by two surfaces, (0001) (which is oxygen-terminated) and (0001¯) (which is Zn-terminated), is investigated via molecular dynamics simulation by using reactive force field (ReaxFF). We found that upon heating beyond a threshold temperature of ∼700 K, surface oxygen atoms begin to sublimate from the (0001) surface. The ratio of oxygen leaving the surface at a given temperature increases as the heating temperature increases. A range of phenomena occurring at the atomic level on the (0001) surface has also been explored, such as formation of oxygen dimers on the surface and evolution of partial charge distribution in the slab during the annealing process. It was found that the partial charge distribution as a function of the depth from the surface undergoes a qualitative change when the annealing temperature is above the threshold temperature.

Melting behaviour of gold-platinum nanoalloy clusters by molecular dynamics simulations

Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.